1
Transistor
2SD2460
Silicon NPN epitaxial planer type
For low-frequency output amplification
s
Features
q
High foward current transfer ratio h
FE
.
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
EIAJ:SC72
3:Base
New S Type Package
4.0
0.2
marking
2.54
0.15
1.27
1.27
3.0
0.2
15.6
0.5
2.0
0.2
0.7
0.1
0.45
0.1
1
2
3
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
20
20
15
1.5
0.7
300
150
55 ~ +150
Unit
V
V
V
A
A
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*
I
C
= 500mA, I
B
= 50mA
*
V
CB
= 20V, I
E
= 20mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
20
20
15
1000
typ
0.15
55
10
max
1
10
2500
0.4
15
Unit
A
A
V
V
V
V
MHz
pF
*
Pulse measurement
2
Transistor
2SD2460
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
240
200
160
120
80
40
Ta=25C
50
A
60
A
70
A
I
B
=100
A
40
A
30
A
20
A
10
A
80
A
90
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
25C
25C
Ta=75C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0
2400
1800
600
1500
2100
1200
300
900
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
3
10
30
100
0
24
20
16
12
8
4
f=1MHz
I
E
=0
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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