Power Transistors
1
2SD2538
Silicon NPN triple diffusion planer type Darlington
For power amplification
I Features
High forward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings T
C
= 25C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
5
V
Peak collector current
I
CP
4
A
Collector current
I
C
2
A
Collector power
T
C
= 25C
P
C
35
W
dissipation
T
a
= 25C
2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
I Electrical Characteristics T
C
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 60 V, I
E
= 0
1
mA
I
CEO
V
CE
= 30 V, I
B
= 0
2
mA
Emitter cutoff current
I
EBO
V
EB
= 5 V, I
C
= 0
2
mA
Collector to emitter voltage
V
CEO
I
C
= 30 mA, I
B
= 0
60
V
Forward current transfer ratio
h
FE1
V
CE
= 4 V, I
C
= 1 A
1 000
h
FE2
*
V
CE
= 4 V, I
C
= 2 A
2 000
10 000
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 2 A, I
B
= 8 mA
2.5
V
Base to emitter voltage
V
BE
V
CE
= 4 V, I
C
= 2 A
2.8
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 0.5 A, f = 1 MHz
20
MHz
Turn-on time
t
on
I
C
= 2 A, I
B1
= 8 mA, I
B2
= -8 mA
0.5
s
Storage time
t
stg
V
CC
= 50 V
4.0
s
Fall time
t
f
1.0
s
1.4
0.2
1.6
0.2
0.8
0.1
0.55
0.15
2.54
0.30
5.08
0.50
1
2
3
2.6
0.1
2.9
0.2
4.6
0.2
3.2
0.1
3.0
0.5
9.9
0.3
15.0
0.5
13.7
0.2
4.2
0.2
Solder Dip
1: Base
2: Collector
3: Emitter
TO-220D Full Pack Package
Internal Connection
B
C
E
Note) *: Rank classification
Rank
P
Q
h
FE2
4 000 to 10 000 2 000 to 5 000
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