1
Transistor
2SD2598
Silicon NPN epitaxial planer type
darlington
For low-frequency amplification
s
Features
q
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h
FE
= 4000 to 20000.
q
A shunt resistor is omitted from the driver.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
0.1
4.5
0.1
14.5
0.5
2.5
0.5
2.5
0.5
2.5
0.1
6.9
0.1
1.05
0.05
(1.45)
4.0
0.7
0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
0.05
0.45
+0.1
0.05
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*1
T
j
T
stg
Ratings
60
50
5
750
500
1
150
55 ~ +150
Unit
V
V
V
mA
mA
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
I
C
= 500mA, I
B
= 0.5mA
*2
V
CB
= 10V, I
E
= 50mA, f = 200MHz
min
60
50
5
4000
typ
200
max
100
100
20000
2.5
3.0
Unit
nA
nA
V
V
V
V
V
MHz
*1
h
FE
Rank classification
Rank
Q
R
h
FE
4000 ~ 10000 8000 ~ 20000
1.2
0.1
0.65
max.
0.45
0.1
0.05
+
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Internal Connection
B
C
E
2
Transistor
2SD2598
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
0
12
10
8
2
6
4
0
900
750
600
450
300
150
Ta=25C
I
B
=150
A
75
A
50
A
125
A 100
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
25C
75C
Ta=25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
Ta=25C
25C
75C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
10
10
2
10
3
10
5
10
4
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
9.0
7.5
6.0
4.5
3..0
1.5
f=1MHz
I
E
=0
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
160
40
120
80
140
20
100
60
0
2.0
1.6
1.2
0.8
0.4
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
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