239
Silicon Junction FETs (Small Signal)
unit: mm
2SJ0364
(2SJ364)
Silicon P-Channel Junction FET
For analog switch
I
Features
G Low ON-resistance
G Low-noise characteristics
1: Source
2: Drain
EIAJ: SC-70
3: Gate
SMini3-G1 Package
I
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
65
-20
-10
150
150
-55 to +150
Unit
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta = 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
I
DSS
*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
C
iss
C
rss
Conditions
V
DS
=
-10V, V
GS
= 0
V
GS
= 30V, V
DS
= 0
I
G
= 10
A, V
DS
= 0
V
DS
=
-10V, I
D
=
-10A
V
DS
=
-10V, I
D
=
-1mA, f = 1kHz
V
DS
=
-10mV, V
GS
= 0
V
DS
=
-10V, V
GS
= 0, f = 1MHz
min
- 0.2
65
1.8
max
-6
10
3.5
Unit
mA
nA
V
V
mS
pF
pF
*
I
DSS
rank classification
Marking Symbol (Example): 4M
typ
1.5
2.5
300
12
4
Runk
I
DSS
(mA)
Marking Symbol
O
- 0.2 to -1
4MO
P
- 0.6 to -1.5
4MP
Q
-1 to -3
4MQ
R
-2.5 to -6
4MR
2.1
0.1
1.3
0.1
0.3
+0.1
0.0
2.0
0.2
1.25
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
0.1
0.9
0.1
0 to 0.1
0.9
+0.2
0.1
0.15
+0.10
0.05
5
10
Note) The part number in the parenthesis shows conventional part number.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
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2001 MAR
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