1
Publication date: January 2002
SJF00006BED
Silicon Junction FETs (Small Signal)
2SK0198
(2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
s Features
q High mutual conductance g
m
q Low noise type
q Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
1: Source
JEDEC: TO-236
2: Drain
EIAJ: SC-59
3: Gate
Mini3-G1 Package
s Absolute Maximum Ratings
(T
a
=
25
C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
ch
T
stg
Ratings
30
-
30
20
10
150
150
-
55 to
+
150
Unit
V
V
mA
mA
mW
C
C
s Electrical Characteristics
(T
a
=
25
C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS
*
I
GSS
V
GSC
g
m
C
iss
C
rss
NV
Conditions
V
DS
=
10 V, V
GS
=
0
V
GS
=
-
30 V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
A
V
DS
=
10 V, I
D
=
0.5 mA, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DS
=
30 V, I
D
=
1 mA, G
V
=
80 dB
R
g
=
100 k
, Function
=
FLAT
min
0.5
-
0.1
4
max
12
-
100
-
1.5
Unit
mA
nA
V
mS
pF
pF
mV
*
I
DSS
rank classification
Marking Symbol (Example): 1O
typ
13
14
3.5
60
Runk
I
DSS
(mA)
Marking Symbol
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
Note) The part number in the parenthesis shows conventional part number.
0.40
+0.10
0.05
(0.65)
1.50
+0.25 0.05
2.8
+0.2 0.3
2
1
3
(0.95) (0.95)
1.9
0.1
2.90
+0.20
0.05
0.16
+0.10
0.06
0.4
0.2
5
10
0 to 0.1
1.1
+0.2 0.1
1.1
+0.3 0.1
Unit: mm
Please read the following notes before using the datasheets
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2001 MAR
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