251
Silicon Junction FETs (Small Signal)
unit: mm
2SK0662
(2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
I
Features
G High mutual conductance g
m
G Low noise type
G S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
V
DSX
V
GDO
I
D
I
G
P
D
T
j
T
stg
Ratings
30
-30
20
10
150
125
-55 to +125
Unit
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta = 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Source cut-off voltage
Mutual conductance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
I
DSS
*
I
GSS
V
GSC
g
m
C
iss
C
rss
NV
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
-30V, V
DS
= 0
V
DS
= 10V, I
D
= 10
A
V
DS
= 10V, I
D
= 0.5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 30V, I
D
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
0.5
- 0.1
4
4
max
12
-100
-1.5
Unit
mA
nA
V
mS
p F
p F
mV
*
I
DSS
rank classification
Marking Symbol (Example): 1O
typ
14
3.5
60
Runk
I
DSS
(mA)
Marking Symbol
P
0.5 to 3
1OP
Q
2 to 6
1OQ
R
4 to 12
1OR
1: Source
2: Drain
EIAJ: SC-70
3: Gate
SMini3-G1 Package
Note) The part number in the parenthesis shows conventional part number.
2.1
0.1
1.3
0.1
0.3
+0.1
0.0
2.0
0.2
1.25
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
0.1
0.9
0.1
0 to 0.1
0.9
+0.2
0.1
0.15
+0.10
0.05
5
10
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2001 MAR
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