Silicon Junction FETs (Small Signal)
1
Publication date: August 2003
SJF00039AED
2SK1860
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
Features
High mutual conductance g
m
Low noise voltage of NV
Absolute Maximum Ratings T
a
= 25C
1: Drain
2: Source
3: Gate
Minit3-F1 Package
Unit: mm
0.05
+0.10
0.40
0.01
+0.02
0.12
2.1
0.1
1.5
0.2
2.20
0.15
0.7
0.1
5.8
0.2
2.9
0.2
1.9
0.1
(0.95)
(0.5)
(0.95)
2
3
1
10
5
Electrical Characteristics T
a
= 25C 3C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * :
G
v
f is assured for AQL0.065%. (the measurment method is used by source-grounded circuit.)
Parameter
Symbol
Rating
Unit
Drain-source voltage (Gate open)
V
DSO
20
V
Drain-gate voltage (Souse open)
V
DGO
20
V
Drain-source current (Gate open)
I
DSO
2
mA
Drain-gate current (Souse open)
I
DGO
2
mA
Gate-source cutoff current (Drain open)
I
GSO
2
mA
Power dissipation
P
D
200
mW
Operating ambient temperature
T
opr
-20
to
+80
C
Storage temperature
T
stg
-55
to
+150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain current
I
D
V
DS
= 4.5 V, C
O
= 10 pFR
D
= 2.2 k 1%
100
600
A
Drain-sourse cutoff current
I
DSS
V
DS
= 4.5 V, V
GS
= 0
95
480
A
(G-S short)
Mutual conductance
g
m
V
D
= 4.5 V, V
GS
= 0
f = 1 kHz
700
1 600
S
Noise voltage
NV
V
D
= 4.5 V, R
D
= 2.2 k 1%
4
V
C
O
= 10 pF, A-curve
Voltage gain
G
v1
V
D
= 4.5 V, R
D
= 2.2 k 1%
-3
2
dB
C
O
= 10 pF, e
G
= 10 mV f = 1 kHz
G
v2
V
D
= 12 V, R
D
= 2.2 k 1%
0
3.3
dB
C
O
= 10 pF, e
G
= 10 mV f = 1 kHz
G
v3
V
D
= 1.5 V, R
D
= 2.2 k 1%
-4.5 - 0.3
dB
C
O
= 10 pF, e
G
= 10 mV f = 1 kHz
G
v
f
*
V
D
= 4.5 V, R
D
= 2.2 k 1%
0
1.5
dB
C
O
= 10 pF, e
G
= 10 mV f = 1 kHz to 70 Hz
Voltage gain difference
G
v2
-
G
v1
0
3.5
dB
G
v1
-
G
v3
0
3.5
dB
Marking Symbol: 1H
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2002 JUL
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