262
Silicon Junction FETs (Small Signal)
unit: mm
2SK2380
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For infrared sensor
I
Features
G Low gate to source leakage current, I
GSS
G Small capacitance of C
iss
, C
oss
, C
rss
G SS-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDO
V
GSO
I
D
I
G
P
D
T
ch
T
stg
Ratings
-40
-40
1
10
125
125
-55 to +125
Unit
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta = 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
-20V, V
DS
= 0
I
G
=
-10A, V
DS
= 0
V
DS
= 10V, I
D
= 1
A
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
min
50
-40
0.05
max
200
- 0.5
-3
Unit
A
nA
V
V
mS
pF
pF
pF
*
I
DSS
rank classification
typ
-1.3
1
0.4
0.4
Runk
I
DSS
(mA)
Marking Symbol
Q
50 to 100
EBQ
R
70 to 130
EBR
S
100 to 200
EBS
1: Source
2: Drain
EIAJ: SC-89
3: Gate
SSMini3-F2 Package
Marking Symbol (Example): EB
0.28
0.05
3
1
2
0.28
0.05
(0.80)
1.60
+0.05
0.03
0.12
+0.05
0.02
0.60
+0.05
0.03
(0.80)
(0.51)
(0.51)
0 to 0.1
(0.15)
3
(0.44)
(0.44)
0.88
(0.375)
+0.05
0.03
0.80
0.05
(0.80)
1.60
0.05
3
Symbol
I
DSS
*
I
GSS
V
DS
V
GSC
| Y
fs
|
C
iss
C
oss
C
rss
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2001 MAR
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