1
Power F-MOS FETs
unit: mm
2SK2383
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
1: Gate
2: Drain
3: Source
TOP-3E Package
s Electrical Characteristics
(T
C
= 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 400V, V
GS
= 0
V
GS
= 30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 7A
V
DS
= 25V, I
D
= 7A
I
DR
= 13A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
DD
= 150V, I
D
= 7A
V
GS
= 10V, R
L
= 21.4
min
500
1
5
typ
0.45
8
1700
300
120
30
70
90
210
max
100
1
5
0.6
-
1.7
1.25
41.67
Unit
A
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
C/W
C/W
s Absolute Maximum Ratings
(T
C
= 25C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25C
Ta = 25C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
500
30
13
26
170
100
3
150
-
55 to +150
Unit
V
V
A
A
mJ
W
C
C
*
L = 2mH, I
L
= 13A, 1 pulse
15.50.5
26.50.5
22.00.5
23.4
18.60.5
3.30.3
5.50.3
2.0
0.70.1
2.0
2.0
1.2
10.0
3.00.3
3.20.1
4.5
5.450.3
1
2
3
5.450.3
1.10.1
2.00.2
4.0
5
5
5
5
5
5
0.70.1
2
Power F-MOS FETs
2SK2383
Area of safe operation (ASO)
P
D
Ta
IAS
L-load
I
D
V
GS
V
th
T
C
V
DS
V
GS
R
DS(on)
I
D
| Y
fs
|
I
D
C
iss
, C
oss
, C
rss
V
DS
1
10
100
1000
0.01
0.1
1
10
100
Non repetitive pulse
T
C
=25C
I
DP
t=100
s
1ms
10ms
100ms
DC
I
D
Drain to source voltage V
DS
(V)
Drain current I
D
(A
)
0
20
40
60
80 100 120 140 160
0
20
40
60
80
100
120
(1) T
C
=Ta
(2) Without heat sink
(P
D
=3W)
(1)
(2)
Ambient temperature Ta (C)
Allowable power dissipation P
D
(W
)
0.1
1
0.3
3
10
0.1
100
10
1
0.3
3
30
T
C
=25C
170mJ
L-load (mH)
Avalanche current IAS
(A
)
0
7
3
1
4
6
2
5
0
2
4
6
8
10
V
DS
=25V
100C
T
C
=150C
25C
0C
Gate to source voltage V
GS
(V)
Drain current I
D
(A
)
0
25
50
75
100
125
150
0
1
2
3
4
5
6
V
DS
=25V
I
D
=1mA
Case temperature T
C
(C)
Gate threshold voltage V
th
(V
)
0
5
10
15
20
25
30
0
10
20
30
40
50
T
C
=25C
I
D
=26A
13A
6.5A
Gate to source voltage V
GS
(V)
Drain to source voltage V
DS
(V
)
0
2
4
6
8
10
12
14
16
0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
=10V
T
C
=150C
100C
25C
0C
Drain current I
D
(A)
Drain to source ON-resistance R
DS(on)
(
)
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
V
DS
=25V
T
C
=25C
150C
T
C
=0C
25C
100C
Drain current I
D
(A)
Forward transfer admittance |Y
fs
|
(S
)
0
40
80
120
160
200
1
10
100
1000
10000
f=1MHz
T
C
=25C
C
iss
C
oss
C
rss
Drain to source voltage V
DS
(V)
Input capacitance
(Common source
), Output capacitance
(Common source
),
Reverse transfer capacitance
(Common source
) C
iss
,C
oss
,C
rss
(pF
)
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