1
Power F-MOS FETs
unit: mm
2SK2573 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
1: Gate
2: Drain
3: Source
TOP-3E Package
s Electrical Characteristics
(T
C
= 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
on
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 400V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
DS
= 25V, I
D
= 10A
I
DR
= 20A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
DD
= 150V, I
D
= 10A
V
GS
= 10V, R
L
= 15
min
500
1
7.2
typ
0.32
12
3000
430
175
150
140
480
max
100
1
5
0.4
-
2.8
1.25
41.67
Unit
A
A
V
V
S
V
pF
pF
pF
ns
ns
ns
C/W
C/W
s Absolute Maximum Ratings
(T
C
= 25C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25C
Ta = 25C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
500
30
20
40
20
100
3
150
-
55 to +150
Unit
V
V
A
A
mJ
W
C
C
*
L = 0.1mH, I
L
= 20A, 1 pulse
15.50.5
26.50.5
22.00.5
23.4
18.60.5
3.30.3
5.50.3
2.0
0.70.1
2.0
2.0
1.2
10.0
3.00.3
3.20.1
4.5
5.450.3
1
2
3
5.450.3
1.10.1
2.00.2
4.0
5
5
5
5
5
5
0.70.1
2
Power F-MOS FETs
2SK2573
Area of safe operation (ASO)
P
D
Ta
IAS
L-load
I
D
V
GS
R
DS(on)
I
D
C
iss
, C
oss
, C
rss
V
DS
| Y
fs
|
I
D
t
on
, t
f
, t
d(off)
I
D
0
50
40
10
30
20
0
16
12
4
10
14
8
2
6
V
DS
=25V
T
C
=25C
Drain current I
D
(A)
Forward transfer admittance |Y
fs
|
(S
)
10
1
1
10
10
2
10
3
10
1
10
2
10
1
Non repetitive pulse
T
C
=25C
t=1ms
10ms
100ms
DC
I
D
I
DP
Drain to source voltage V
DS
(V)
Drain current I
D
(A
)
0
200
50
150
100
10
10000
1000
100
30
300
3000
C
iss
C
oss
C
rss
f=1MHz
T
C
=25C
Drain to source voltage V
DS
(V)
Input capacitance
(Common source
), Output capacitance
(Common source
),
Reverse transfer capacitance
(Common source
) C
iss
,C
oss
,C
rss
(pF
)
10
2
10
1
1
10
10
1
10
2
10
1
E=20mJ
T
C
=25C
L-load (mH)
Avalanche current IAS
(A
)
0
10
8
2
6
4
0
30
25
20
15
10
5
V
DS
=25V
T
C
=25C
Gate to source voltage V
GS
(V)
Drain current I
D
(A
)
0
160
40
120
80
140
20
100
60
0
160
120
40
100
140
80
20
60
P
D
=3.0W
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(1)
(2)
(3)
Ambient temperature Ta (C)
Allowable power dissipation P
D
(W
)
0
50
40
10
30
20
0
1.2
1.0
0.8
0.6
0.4
0.2
T
C
=25C
V
GS
=10V
15V
Drain current I
D
(A)
Drain to source ON-resistance R
DS(on)
(
)
0
25
20
5
15
10
0
800
600
200
500
700
400
100
300
V
CC
=150
V
GS
=10V
T
C
=25C
t
d(off)
t
on
t
f
Drain current I
D
(A)
Switching time t
on
,t
f
,t
d(off)
(
s
)
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