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Электронный компонент: 2SK3025

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182
Power F-MOS FETs
unit: mm
2SK3025
Silicon N-Channel Power F-MOS FET
I Features
G Avalanche energy capacity guaranteed
G High-speed switching
G Low ON-resistance
G No secondary breakdown
G Low-voltage drive
G High electrostatic breakdown voltage
I Applications
G Contactless relay
G Diving circuit for a solenoid
G Driving circuit for a motor
G Control equipment
G Switching power supply
1: Gate
2: Drain
3: Source
U-G1 Package
I Electrical Characteristics
(T
C
= 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Thermal resistance between channel and atmosphere
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
R
th(ch-a)
Conditions
V
DS
= 50V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
V
GS
= 4V, I
D
= 15A
V
DS
= 10V, I
D
= 15A
I
DR
= 15A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DD
= 30V, I
D
= 15A
V
GS
= 10V, R
L
= 2
min
60
1
9
typ
25
35
18
1200
400
200
10
20
140
350
max
10
10
2.5
40
55
-1.5
6.25
125
Unit
A
A
V
V
m
m
S
V
pF
pF
pF
ns
ns
ns
ns
C/W
C/W
I Absolute Maximum Ratings
(T
C
= 25C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25C
Ta = 25C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
60
20
30
60
45
20
1
150
-55 to +150
Unit
V
V
A
A
mJ
W
C
C
*
L = 0.1mH, I
L
= 30A, 1 pulse
Internal Connection
G
D
S
6.5
0.1
2.3
0.1
(5.3)
(4.35)
(3.0)
(1.8)
(5.5)
0.75
0.1
2.3
0.1
4.6
0.1
1
1
2
3
3
2
0.5
0.1
1.0
0.1
0.1
0.05
0.5
0.1
0.8 max.
1.0
0.2
7.3
0.1
1.8
0.1
2.5
0.1
5.3
0.1
4.35
0.1
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
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there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
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and semiconductors described in this material
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eral electronic equipment (such as office equipment, communications equipment, measuring in-
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Consult our sales staff in advance for information on the following applications:
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Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
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2001 MAR