201
Power F-MOS FETs
unit: mm
2SK3044
Silicon N-Channel Power F-MOS FET
I
Features
G Avalanche energy capacity guaranteed: EAS > 130mJ
G V
GSS
= 30V guaranteed
G High-speed switching: t
f
= 50ns
G No secondary breakdown
I
Applications
G Contactless relay
G Diving circuit for a solenoid
G Driving circuit for a motor
G Control equipment
G Switching power supply
I
Electrical Characteristics
(T
C
= 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Conditions
V
DS
= 360V, V
GS
= 0
V
GS
= 30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 4A
V
DS
= 25V, I
D
= 4A
I
DR
= 8A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 4A
V
DD
= 150V, R
L
= 37.5
min
450
2
3
typ
0.56
5
1300
160
70
25
45
150
50
max
0.1
1
5
0.75
-1.7
Unit
mA
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
I
Absolute Maximum Ratings
(T
C
= 25C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25C
Ta = 25C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
450
30
7
14
100
40
2
150
-55 to +150
Unit
V
V
A
A
mJ
W
C
C
*
L = 4.1mH, I
L
= 8A, V
DD
= 50V, 1 pulse
1: Gate
2: Drain
3: Source
TO-220D-A1 Package
1.4
0.2
1.6
0.2
0.8
0.1
0.55
0.15
2.54
0.30
5.08
0.50
1
2
3
2.6
0.1
2.9
0.2
4.6
0.2
3.2
0.1
3.0
0.5
9.9
0.3
15.0
0.5
13.7
0.2
4.2
0.2
Solder Dip
202
Power F-MOS FETs
2SK3044
Area of safe operation (ASO)
P
D
Ta
EAS
T
j
I
D
V
DS
I
D
V
GS
V
th
T
C
R
DS(on)
I
D
R
DS(on)
I
D
| Y
fs
|
I
D
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
t=10
s
100
s
DC
1ms
10ms
100ms
Drain to source voltage V
DS
(V)
Drain current I
D
(A
)
0
160
40
120
80
140
20
100
60
0
60
50
40
30
20
10
(1) T
C
=Ta
(2) Without heat sink
(1)
(2)
Ambient temperature Ta (C)
Allowable power dissipation P
D
(W
)
25
175
150
125
50
100
75
0
100
80
60
40
20
Junction temperature T
j
(C)
Avalanche energy capacity EAS
(mJ
)
0
10
20
30
40
50
60
0
16
12
4
10
14
8
2
6
V
GS
=15V
10V
6V
7V
5.5V
50W
5V
T
C
=25C
Drain to source voltage V
DS
(V)
Drain current I
D
(A
)
0
12
10
8
2
6
4
0
10
8
6
4
2
T
C
=0C
150C
100C
25C
V
DS
=25V
Gate to source voltage V
GS
(V)
Drain current I
D
(A
)
0
25
50
75
100
125
150
0
6
5
4
3
2
1
V
DS
=25V
I
D
=1mA
Case temperature T
C
(C)
Gate threshold voltage V
th
(V
)
0
10
8
2
6
4
0
2.4
2.0
1.6
1.2
0.8
0.4
V
GS
=10V
T
C
=150C
100C
25C
0C
Drain current I
D
(A)
Drain to source ON-resistance R
DS(on)
(
)
0
10
8
2
6
4
0
2.4
2.0
1.6
1.2
0.8
0.4
T
C
=25C
V
GS
=10V
15V
Drain current I
D
(A)
Drain to source ON-resistance R
DS(on)
(
)
0
2
4
6
8
10
0
12
10
8
6
4
2
V
DS
=25V
T
C
=25C
Drain current I
D
(A)
Forward transfer admittance |Y
fs
|
(S
)
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semiconductor products best suited to their applications.
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Consult our sales staff in advance for information on the following applications:
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make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, redundant design is recommended,
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2001 MAR
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