Power MOSFETs
1
Publication date: March 2004
SJG00037AED
2SK3494
N-channel enhancement mode MOSFET
Features
Low on-resistance, low Q
g
High avalanche resistance
Applications
For PDP
For high-speed switching
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Unit: mm
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
V
DSS
250
V
Gate-source surrender voltage
V
GSS
30
V
Drain current
I
D
20
A
Peak drain current
I
DP
80
A
Avalanche energy capability
*
EAS
657
mJ
Power dissipation
P
D
50
W
T
a
= 25C
1.4
Channel temperature
T
ch
150
C
Storage temperature
T
stg
-55 to +150
C
0 to 0.5
1
2
3
(8.9)
(10.2)
0 to 0.3
(2.1)
(
6.4)
(1.4)
10.5
0.3
4.6
0.2
1.4
0.1
0.8
0.1
2.5
0.2
1.4
0.1
2.54
0.3
10.1
0.3
3.0
0.5
(1.4)
1.5
0.3
0.6
0.1
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Note) *: L
= 2.79 mH, I
L
= 20 A, V
DD
= 50 V, 1 pulse, T
a
= 25C
Marking Symbol: K3494
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
V
DSS
I
D
= 1 mA, V
GS
= 0
250
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
2.0
4.0
V
Drain-source cutoff current
I
DSS
V
DS
= 200 V, V
GS
= 0
10
A
Gate-source cutoff current
I
GSS
V
GS
= 30 V, V
DS
= 0
1
A
Drain-source ON resistance
R
DS(on)
V
GS
= 10 V, I
D
= 10 A
82
105
m
Forward transfer admittance
Y
fs
V
DS
= 10 V, I
D
= 10 A
7
14
S
Short-circuit forward transfer capacitance
C
iss
V
DS
= 25 V, V
GS
= 0, f = 1 MHz
2 450
pF
(Common-source)
Short-circuit output capacitance
C
oss
356
pF
(Common-source)
Reverse transfer capacitance
C
rss
40
pF
(Common-source)
Turn-on delay time
t
d(on)
V
DD
100 V, I
D
= 10 A
36
ns
Rise time
T
r
R
L
= 10 , V
GS
= 10 V
20
ns
Turn-off delay time
t
d(off)
184
ns
Fall time
t
f
29
ns
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Consult our sales staff in advance for information on the following applications:
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tions satisfy your requirements.
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2003 SEP
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