1
Silicon MOS FETs (Small Signal)
2SK0657
(2SK657)
Silicon N-Channel MOS FET
For switching
I
Features
G High-speed switching
G M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
400
150
-55 to +150
Unit
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta = 25C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
on
*
t
off
*
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100
A, V
GS
= 0
I
D
= 100
A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200
*
t
on
, t
off
measurement circuit
min
50
1.5
20
typ
10
20
Unit
A
A
V
V
mS
pF
pF
pF
ns
ns
max
10
50
3.5
50
15
6
1.2
V
out
V
DD
= 5V
V
GS
= 5V
50
200
100
F
V
in
90%
10%
10%
90%
V
out
t
on
t
off
Internal Connection
G
D
S
1: Source
2: Drain
3: Gate
EIAJ: SC-71
M-A1 Package
6.9
0.1
2.5
0.1
(1.0)
(1.0)
(1.5)
(0.85)
0.45
0.05
0.55
0.1
(2.5)
(2.5)
2
3
1
R 0.7
R 0.9
(0.4)
3.5
0.1
4.5
0.1
4.1
0.2
2.4
0.2
1.25
0.05
2.0
0.2
1.0
0.1
(1.5)
Note) The part number in the parenthesis shows conventional part number.
Unit: mm
2
Silicon MOS FETs (Small Signal)
P
D
Ta
I
D
V
DS
| Y
fs
|
V
GS
C
iss
, C
oss
, C
rss
V
DS
I
D
V
GS
R
DS(on)
V
GS
V
IN
I
O
2SK0657
0
160
40
120
80
140
20
100
60
0
0.7
0.6
0.2
0.5
0.4
0.1
0.3
Ambient temperature Ta (C)
Allowable power dissipation P
D
(W
)
0
12
10
8
2
6
4
0
120
100
80
60
40
20
V
GS
=6.0V
5.5V
5.0V
4.5V
3.5V
2.5V
3.0V
4.0V
Ta=25C
Drain to source voltage V
DS
(V)
Drain current I
D
(mA
)
0
12
10
8
2
6
4
0
60
50
40
30
20
10
V
DS
=5V
Ta=25C
Gate to source voltage V
GS
(V)
Forward transfer admittance |Y
fs
|
(mS
)
1
3
10
30
100
0
12
10
8
6
4
2
V
GS
=0
f=1MHz
Ta=25C
C
iss
C
oss
C
rss
Drain to source voltage V
DS
(V)
Input capacitance
(Common source
), Output capacitance
(Common source
),
Reverse transfer capacitance
(Common source
) C
iss
,C
oss
,C
rss
(pF
)
0
12
10
8
2
6
4
0
120
100
80
60
40
20
Ta=25C
25C
75C
V
DS
=5V
Ta=25C
Gate to source voltage V
GS
(V)
Drain current I
D
(mA
)
0
12
10
8
2
6
4
0
120
100
80
60
40
20
I
D
=20mA
Ta=75C
25C
25C
Gate to source voltage V
GS
(V)
Drain to source ON-resistance R
DS(on)
(
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
V
O
=5V
Ta=25C
Output current I
O
(mA)
Input voltage V
IN
(V
)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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