1
Transistor
2SD637
Silicon NPN epitaxial planer type
For low-power general amplification
s
Features
q
High foward current transfer ratio h
FE
.
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC71
3:Emitter
M Type Mold Package
6.9
0.1
0.55
0.1
0.45
0.05
1.0
0.1
1.0
2.5
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
0.1
2.0
0.2
2.4
0.2
1.25
0.05
4.1
0.2
4
.5
0.1
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
50
7
200
100
400
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
7
160
typ
0.3
150
3.5
max
1
1
460
0.5
Unit
A
A
V
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
Q
R
S
h
FE
160 ~ 260
210 ~ 340
290 ~ 460
2
Transistor
2SD637
P
C
-- Ta
I
C
-- V
CE
I
B
-- V
BE
I
C
-- V
BE
I
C
-- I
B
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
10
8
2
6
4
0
60
50
40
30
20
10
Ta=25C
I
B
=160
A
40
A
20
A
60
A
80
A
140
A
120
A
100
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
1.0
0.8
0.2
0.6
0.4
0
1200
1000
800
600
400
200
V
CE
=10V
Ta=25C
Base to emitter voltage V
BE
(V)
Base current I
B
(
A
)
0
2.0
1.6
0.4
1.2
0.8
0
200
160
120
80
40
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0
1000
800
200
600
400
0
240
200
160
120
80
40
V
CE
=10V
Ta=25C
Base current I
B
(
A)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
25C
25C
Ta=75C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
600
500
400
300
200
100
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
300
240
120
180
60
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
12
10
8
6
4
2
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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