1
Transistor
2SC2377
Silicon NPN epitaxial planer type
For high-frequency amplification
s
Features
q
Optimum for RF amplification of FM/AM radios.
q
High transition frequency f
T
.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC71
3:Emitter
M Type Mold Package
6.9
0.1
0.55
0.1
0.45
0.05
1.0
0.1
1.0
2.5
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
0.1
2.0
0.2
2.4
0.2
1.25
0.05
4.1
0.2
4
.5
0.1
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
15
400
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Noise figure
Power gain
Common emitter reverse transfer capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
*
V
BE
f
T
NF
PG
C
re
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 20V, I
B
= 0
V
EB
= 3V, I
C
= 0
V
CB
= 6V, I
E
= 1mA
V
CB
= 6V, I
E
= 1mA
V
CB
= 6V, I
E
= 1mA, f = 100MHz
V
CB
= 6V, I
E
= 1mA
V
CB
= 6V, I
E
= 1mA
V
CE
= 6V, I
C
= 1mA
min
65
450
20
typ
720
650
3.3
24
0.8
max
100
10
1
260
5
1
*
h
FE
Rank classification
Rank
C
D
h
FE
65 ~ 160
100 ~ 260
Unit
nA
A
A
mV
MHz
dB
dB
pF
2
Transistor
2SC2377
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
Z
rb
-- I
E
C
re
-- V
CE
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
450
350
250
150
50
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
18
6
12
0
12
10
8
6
4
2
Ta=25C
I
B
=100
A
20
A
40
A
60
A
80
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
180
60
120
0
12
10
8
6
4
2
Ta=25C
V
CE
=10V
6V
Base current I
B
(
A)
Collector current I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
30
25
20
15
10
5
V
CE
=6V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
360
300
240
180
120
60
V
CE
=6V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
1200
1000
800
600
400
200
Ta=25C
V
CB
=10V
6V
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
0.1
0.3
1
3
10
0
120
100
80
60
40
20
f=2MHz
Ta=25C
V
CE
=6V
10V
Emitter current I
E
(mA)
Reverse transfer impedance Z
rb
(
)
0.1
1
10
100
0.3
3
30
0
2.4
2.0
1.6
1.2
0.8
0.4
I
C
=1mA
f=10.7MHz
Ta=25C
Collector to emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(pF
)
3
Transistor
2SC2377
C
ob
-- V
CB
PG -- I
E
NF -- I
E
b
ie
-- g
ie
b
re
-- g
re
b
fe
-- g
fe
b
oe
-- g
oe
0
30
25
20
5
15
10
0
1.2
1.0
0.8
0.6
0.4
0.2
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
1
10
100
0.3
3
30
0
40
30
10
25
35
20
5
15
f=100MHz
R
g
=50
Ta=25C
V
CE
=10V
6V
Emitter current I
E
(mA)
Power gain PG
(dB
)
0.1
1
10
100
0.3
3
30
0
12
10
8
6
4
2
f=100MHz
R
g
=50k
Ta=25C
V
CE
=6V, 10V
Emitter current I
E
(mA)
Noise figure NF
(dB
)
0
15
9
3
6
12
0
20
16
12
8
4
18
14
10
6
2
y
ie
=g
ie
+jb
ie
V
CE
=10V
100
100
1mA
2mA
4mA
7mA
I
E
= 0.5mA
150
f=10.7MHz
58
58
25
25
Input conductance g
ie
(mS)
Input susceptance b
ie
(mS
)
0.5
0
0.1
0.4
0.2
0.3
6
0
1
2
3
4
5
y
re
=g
re
+jb
re
V
CE
=10V
f=150MHz
I
E
=7mA
4mA
1mA
58
25
100
10.7
Reverse transfer conductance g
re
(mS)
Reverse transfer susceptance b
re
(mS
)
0
100
80
20
60
40
120
0
20
40
60
80
100
y
fe
=g
fe
+jb
fe
V
CE
=10V
I
E
=7mA
4mA
2mA
0.4mA
1mA
10.7
f=150MHz
25
58
100
150
150
100
100
58
Forward transfer conductance g
fe
(mS)
Forward transfer susceptance b
fe
(mS
)
0
0.5
0.4
0.1
0.3
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
=g
oe
+jb
oe
V
CE
=10V
f=10.7MHz
I
E
= 0.5mA
2mA
4mA
7mA
1mA
58
25
100
150
Output conductance g
oe
(mS)
Output susceptance b
oe
(mS
)
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