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Электронный компонент: LNC702PS

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1
Semiconductor Laser
2
1
3
1
3
PD
LD
2
Unit : mm
1: LD Anode
2: Common Case
3: PD Cathode
110
1
0.25
1.27
0.07
2.3
0.2
1.2
0.1
6.5
0.5
0.4
0.1
1.0 min.
1.0
0.1
2.0
Bottom view
Junction plane
Reference plane
Reference plane
Reference slot
3-0.45
3.55
0.1
4.3
0.1
5.6
+0
0.025
LNC702PS
GaAlAs Semiconductor Laser
Features
Low threshold current
Stable single horizontal mode oscillation
Low drooping
Applications
Optical data processing devices
Laser beam printers
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
Ratings
Unit
Radiant power
P
O
5
mW
Reverse voltage
Laser
V
R
2
V
PIN
V
R
(PIN)
30
V
Power dissipation
P
d
(PIN)
60
mW
Operating ambient temperature
T
opr
10 to +60
C
Storage temperature
T
stg
40 to +85
C
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Threshold current
I
th
CW
15
25
40
mA
Operating current
I
OP
CW P
O
= 5mW
20
35
50
mA
Operating voltage
V
OP
CW P
O
= 5mW
1.9
2.5
V
Oscillation wavelength
L
*2
CW P
O
= 5mW
780
795
810
nm
Radiation angle
Horizontal direction
//
*1
CW P
O
= 5mW
8
12
15
deg.
Vertical direction
*1
CW P
O
= 5mW
20
33
45
deg.
PIN photo current
I
P
CW P
O
= 5mW, V
R
(PIN)
= 5V
0.3
0.8
1.6
mA
Reverse current (DC)
I
R
V
R
(PIN)
= 15V
0.1
A
Optical axis
X direction
X
CW P
O
= 5mW
2.0
+2.0
deg.
accuracy
Y direction
Y
CW P
O
= 5mW
3.0
+3.0
deg.
*1
The radiation angle is indicated as half full angle.
*2
Sampling inspections are to be performed.
On each wafer, n = 10 samplings are to be performed, with an evaluation criterion of zero rejects.
2
Semiconductor Laser
LNC702PS
P
O
-- I
OP
6
5
4
3
2
1
0
Operating current I
OP
(mA)
Radiant power P
O
(mW)
0
60
20
40
I -- V
200
100
0
100
200
Voltage V (V)
Current I (mA)
4
2
0
2
4
Ta = 25C
Far field pattern
100
80
60
40
20
0
Angle
(deg.)
Relative radiant power
P
O
40
20
0
20
40
I
P
-- Ta
900
500
10
10
30
50
70
Ambient temperature Ta (C )
PIN photo current I
P
(
A)
700
800
600
V
R
(PIN) = 5V
P
O
= 5mW
I
th
-- Ta
10
2
10
Ambient temperature Ta (C )
Threshold current I
th
(mA)
10
10
50
30
70
1
I
OP
-- Ta
10
3
10
2
Ambient temperature Ta (C )
Operating current I
OP
(mA)
10
10
10
50
30
70
P
O
= 5mW
10
10
30
50
70
P
O
-- Ta
10
8
6
4
2
0
Ambient temperature Ta (C )
Radiant power P
O
(mW)
I
d
-- Ta
10
2
10
1
10
1
10
2
Ambient temperature Ta (C )
PIN dark current I
d
(nA)
10
30
70
50
10
3
10
V
R
(PIN) = 15V
//