1
Semiconductor Laser
2
1
3
1
3
PD
LD
2
Unit : mm
1: LD Anode
2: Common Case
3: PD Cathode
110
1
0.25
1.27
2.3
0.2
1.2
0.1
6.5
0.5
0.4
0.1
1.0 min.
1.0
0.1
2.0
Bottom view
Junction plane
Reference plane
LD pellet
Reference plane
Reference slot
3-0.45
1.2max.
3.55
0.1
4.3
0.1
5.6
+0
0.025
0.5 max.
Kovar glass
LNC703PS
Semiconductor Laser for LBP(Laser Beam Printers)
Overview
The LNC703PS is a near infrared GaAlAs laser diode which
provides continuous oscillation in single mode and is stable at low
operating current. This product is characterized by a low operating
current and low drooping, making it suitable for a wide range of
optical information equipment.
Features
Low current operations : 40 mA (with 12 mW output)
High output (15 mW) for increased printing speed
Stable single horizontal mode oscillation
Low astigmatic difference
Low drooping
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
Ratings
Unit
Radiant power
P
O
15
mW
Reverse voltage
Laser
V
R
2
V
PIN
V
R
(PIN)
30
V
Power dissipation
P
d
(PIN)
100
mW
Operating ambient temperature
T
opr
10 to +60
C
Storage temperature
T
stg
40 to +80
C
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Threshold current
I
th
CW
10
20
35
mA
Operating current
I
OP
P
O
= 12mW
30
40
70
mA
Operating voltage
V
OP
P
O
= 12mW
2.0
2.5
V
Oscillation wavelength
L
P
O
= 12mW
775
785
795
nm
Radiation angle
Horizontal direction
//
*
P
O
= 12mW
7
10
12
deg.
Vertical direction
*
P
O
= 12mW
18
25
32
deg.
Differential efficiency
P
O
= 9mW/I(12mW) I(3mW)
0.4
0.7
1.0
mW/mA
Reverse current (DC)
I
R
V
R
(PIN)
= 5V
0.1
A
PIN photo current
I
P
P
O
= 12mW, V
R
(PIN)
= 5V
0.3
mA
Optical axis
X direction
X
P
O
= 12mW
2.0
+2.0
deg.
accuracy
Y direction
Y
P
O
= 12mW
3.0
+3.0
deg.
Droop
D
r
P
O
= 12mW, f
= 600Hz, duty10% to 90%
4
10
%
Oscillation mode
Single horizontal mode
*
//
and
are the angles where the optical intencity is a half of its max. value. ( half full angle )
2
Semiconductor Laser
LNC703PS
P
O
-- I
OP
15
12.5
10.0
7.5
5.0
2.5
0
Operating current I
OP
(mA)
Radiant power P
O
(mW)
0
60
20
40
I -- V
200
100
0
100
200
Voltage V (V)
Current I (mA)
4
2
0
2
4
Ta = 25C
Far field pattern
100
80
60
40
20
0
Angle
(deg.)
Relative radiant power
P
O
40
20
0
20
40
I
P
-- Ta
500
100
10
10
30
50
70
Ambient temperature Ta (C )
PIN photo current I
P
(
A)
300
400
200
V
R
(PIN) = 5V
P
O
= 12mW
P
O
= 12mW
I
th
-- Ta
10
2
10
Ambient temperature Ta (C )
Threshold current I
th
(mA)
10
10
50
30
70
1
I
OP
-- Ta
10
3
10
2
Ambient temperature Ta (C )
Operating current I
OP
(mA)
10
10
10
50
30
70
P
O
-- Ta
20
15
10
5
0
Ambient temperature Ta (C )
Radiant power P
O
(mW)
10
10
30
50
70
I
d
-- Ta
10
2
10
1
10
1
10
2
Ambient temperature Ta (C )
PIN dark current I
d
(nA)
10
30
70
50
10
3
10
V
R
(PIN) = 30V
//
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