1
Semiconductor Laser
2
1
3
1
3
LD
PD
2
Unit : mm
1: LD Anode
2: Common Case
3: PD Cathode
110
1
0.25
1.27
0.07
2.3
1.2
6.5
0.4
0.1
1.0 min.
1.0
0.1
2.0
Bottom view
Junction plane
Reference plane
Reference plane
Reference slot
3-0.45
3.55
0.1
4.4
5.6
+0
0.025
LNCQ03PS
Red Light Semiconductor Laser
For optical control systems
Features
High output operations with oscillatins wavelength of 660nm : 35mw
Low threshold current
Stable single horizontal mode osillation
Space saved by miniaturization
Low astigmatic difference facilitates good concentrated light spot,
production.
Applications
DVD-Ram
Pointer
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
Ratings
Unit
Radiant power
P
O
35
mW
Reverse voltage
Laser
V
R
1.5
V
PIN
V
R
(PIN)
30
V
Power dissipation
P
d
(PIN)
60
mW
Operating ambient temperature
T
opr
10 to +60
C
Storage temperature
T
stg
40 to +85
C
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Threshold current
I
th
CW
20
50
70
mA
Operating current
I
OP
CW P
O
= 30mW
50
95
120
mA
Operating voltage
V
OP
CW P
O
= 30mW
2.0
2.5
3.0
V
Resistance between electrodes
R
S
CW P
O
= 30mW
3.0
5.0
10
Oscillation wavelength
L
CW P
O
= 30mW
635
660
675
nm
Slope efficiency
SE
CW P
O
= 30mW
0.5
0.7
1.1
W/A
Radiation angle
Horizontal direction
//
CW P
O
= 30mW
7.5
8.5
10.5
deg.
Vertical direction
CW P
O
= 30mW
17
22
26.5
deg.
Optical axis
X direction
X
CW P
O
= 30mW
2.0
+2.0
deg.
accuracy
Y direction
Y
CW P
O
= 4mW
3.0
+3.0
deg.
Astigmatic difference
As
*2
CW P
O
= 4mW
5.0
10
m
*1
//
and
are the angles where the optical intencity is a half of its max. value.( half full angle )
*2
Reference to package axis.
*3
Guaranteed value in design.
2
Semiconductor Laser
LNCQ03PS
P
O
-- I
OP
80
60
40
20
0
Operating current I
OP
(mA)
Radiant power P
O
(mW)
0
200
50
100
150
I -- V
160
120
80
40
0
Voltage V (V)
Current I (mA)
0
1
2
3
4
Ta = 25C
Far field pattern
100
75
50
25
0
Angle
(deg.)
Relative radiant power
P
O
60
40
20
0
20
60
40
I
P
-- Ta
0.4
0
20
0
20
40
60
Ambient temperature Ta (C )
PIN photo current I
P
(
A)
0.2
0.3
0.1
I
th
-- Ta
10
2
10
Ambient temperature Ta (C )
Threshold current I
th
(mA)
0
20
60
40
80
1
I
OP
-- Ta
10
3
10
2
Ambient temperature Ta (C )
Operating current I
OP
(mA)
10
0
20
60
40
80
10
10
30
50
70
P
O
-- Ta
50
40
30
20
10
0
Ambient temperature Ta (C )
Radiant power P
O
(mW)
I
d
-- Ta
10
2
10
1
10
1
10
2
Ambient temperature Ta (C )
PIN dark current I
d
(nA)
10
30
70
50
10
3
10
V
R
(PIN) = 30V
Fv
Fh
PDF 
ZIP