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Электронный компонент: MA10702

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Schottky Barrier Diodes (SBD)
1
Publication date: August 2001
SKH00053AED
MA3J702
(MA10702)
Silicon epitaxial planar type
For high frequency rectification
I Features
I
F(AV)
= 500 mA rectification is possible
Small reverse current I
R
. (About 1/10 of I
R
of the ordinary
products)
S-Mini type 3-pin package
I Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
20
V
Repetitive peak reverse-voltage
V
RRM
20
V
Average forward current
I
F(AV)
500
mA
Non-repetitive peak forward-
I
FSM
3
A
surge-current
*
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Internal Connection
Marking Symbol: M4R
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R1
V
R
= 5 V
1
A
I
R2
V
R
= 10 V
10
Forward voltage (DC)
V
F1
I
F
= 10 mA
0.3
0.4
V
V
F2
I
F
= 500 mA
0.5
0.55
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
60
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
5
ns
I
rr
= 10 mA, R
L
= 100
I Electrical Characteristics T
a
= 25C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 s
t
r
= 0.35 ns
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
10%
Input Pulse
Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
1
2
3
1 : Anode
2 : N.C.
3 : Cathode
SMini3-F1 Package
Unit: mm
0.3
2.0
0.2
1.3
0.1
(0.65)
1
3
2
(0.65)
0.9
0.1
2.1
0.1
1.25
0.1
0 to 0.1
(0.15)
(0.425)
5
5
+0.1
0
0.15
+0.1
0.05
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 400 MHz
3. *: t
rr
measuring instrument
Note) The part number in the parenthesis shows conventional part number.
2
MA3J702
SKH00053AED
I
F
V
F
I
R
V
R
V
F
T
a
I
R
T
a
C
t
V
R
10
-5
0
0.1
0.2
0.3
0.4
0.5
0.6
10
-4
10
-3
10
-2
10
-1
1
Forward voltage V
F
(V)
Forward current I
F
(A
)
T
a
= 125C
75
C
25
C
-20C
10
-1
0
5
10
15
20
25
30
1
10
10
2
10
3
10
4
Reverse voltage V
R
(V)
Reverse current I
R
(
A
)
T
a
= 125C
75
C
25
C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
-40
0
40
80
120
160
200
Case temperature T
a
(
C)
Forward voltage V
F
(V
)
I
F
= 500 mA
50 mA
5 mA
0.1
-40
0
40
80
120
160
200
1
10
100
1 000
10 000
Ambient temperature T
a
(
C)
Reverse current I
R
(
A
)
V
R
= 20 V
10 V
6 V
3 V
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF
)
T
a
= 25C
0.1
0.1
1
10
100
0.3
3
30
300
1 000
0.3
3
30
100
10
1
Pulse width t
W
(ms)
Forward surge current I
F(surge)
(A
)
Breakdown point (typ.)
t
W
I
F(surge)
T
a
= 25C
I
F(surge)
t
W
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
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there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
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Request for your special attention and precautions in using the technical information
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Consult our sales staff in advance for information on the following applications:
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notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
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make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
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2001 MAR