221
Rectifier Diodes
MA2J115 (MA115)
Silicon epitaxial planar type
For small power current rectification
I Features
Small S-mini type package, allowing high-density mounting
High reverse voltage V
R
I Absolute Maximum Ratings T
a
= 25
C
Unit : mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 200 V
200
nA
Forward voltage (DC)
V
F
I
F
= 200 mA
1.2
V
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
4.5
pF
I Electrical Characteristics T
a
= 25
C
Note) Rated input/output frequency: 3 MHz
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
200
V
Peak reverse voltage
V
RM
200
V
Output current
I
O
200
mA
Repetitive peak forward
I
FRM
600
mA
current
Non-repetitive peak forward
I
FSM
1
A
surge current
*
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) * : t = l s
5
5
1.25
0.1
0.7
0.1
2.5
0.2
1.7
0.1
0.4
0.1
0 to 0.1
(0.15)
0.16
0.5
0.1
1
2
+0.1
0.06
0.35
0.1
0 to 0.1
1: Anode
2: Cathode
SMini2-F1 Package
Marking Symbol: 1F
Note) The part number in the parenthesis shows conventional part number.
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2001 MAR
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