Zener Diodes
1
Publication date: March 2004
SKE00002CED
MAZ2xxx Series
(MA2xxx Series)
Silicon planar type
For stabilization of power supply
Features
High reliability, achieved by the combination the planar type
and the glass seal
Large power dissipation P
D
Wide voltage range: Zener voltage V
Z
= 5.1 V to 56.0 V
Absolute Maximum Ratings T
a
= 25C
Unit: mm
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
I
FRM
400
mA
Power dissipation
*1
P
D
1.0
W
Non-repetitive reverse surge
P
ZSM
75
W
power dissipation
*2
Junction temperature
T
j
200
C
Storage temperature
T
stg
-55 to +200
C
Common Electrical Characteristics T
a
= 25C 3C
*1
DO-41-A1 Package
0.8
00.5
1st Band
2nd Band
3rd Band
Cathode
Anode
Colored band
indicatesVz
classification
4.0
0.5
27 min.
2.6
+0.4
0.2
27 min.
Note) *1: P
D
= 1.0 W achieved with a printed circuit board
*2: t
= 100 s, T
j
= 150C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 200 mA
1.0
V
Zener voltage
*2
V
Z
I
Z
Specified value
V
Zener operating resistance
R
Z
I
Z
Specified value
Reverse current
I
R
V
R
Specified value
A
Temperature coefficient of zener voltage
*3
S
Z
I
Z
Specified value
mV/
C
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
pF
Specified value
Refer to the list of the
electrical characteristics
within part numbers
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25C)
*2: V
Z
guaranteed 20 ms after current flow.
*3: T
j
= 25C to 150C
Note) The part number in the parenthesis shows conventional part number.
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and semiconductors described in this material
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2003 SEP