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Электронный компонент: MA2B001

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1
Trigger Devices
MA2B001
Silicon planar type trigger device
Thyristor TRIAC trigger circuit
I Features
Satisfactory symmetry of V
BO
Large V
O
and small I
BO
I Absolute Maximum Ratings T
a
= 25C
Unit : mm
DO-35 Package
Parameter
Symbol
Rating
Unit
Average total power dissipation
P
(AV)
150
mW
Peak current
*1
I
PM
2.0
A
Operating ambient temperature
*2
T
opr
100
C
Storage temperature
T
stg
-55 to +125
C
Note) *1 : T
a
< 50C, t = 10
s, repetitive frequency 60 Hz
*2 : Maximum ambient temperature during operation
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Breakover current
I
BO
V
= V
BO
50
A
Breakover voltage
*1
V
BO
I
= I
BO
28
36
V
Output voltage
*1
V
O
4.0
7.0
V
Temperature coefficient of
T.C.(V
BO
)
0.1
%/
C
breakover voltage
Breakover voltage deviation
*2
V
BO
3.5
V
I Electrical Characteristics T
a
= 25C 3C
Note) 1. Rated input/output frequency: 100 MHz
2. *1 : Measurement of V
BO
and V
O
*2 : Symmetry of V
BO
0.56 max.
1.95 max.
24 min.
Color indication (Green)
24 min.
4.5 max.
V
O
V
BO
V
BO'
V
BO
0.068
F
100 V
rms
30 k
70 k
20
Amp.
Trigger Devices
2
MA2B001
V
BO
T
a
I
BO
V
BO
V
O
T
a
0
10
20
30
40
50
45
35
25
15
5
0
20
40
80
60
140
120
100
160
Ambient temperature T
a
(
C)
Breakover voltage V
BO
(V
)
0
0
40
120
160
140
100
60
20
80
2
4
6
8
10
12
14
16
Ambient temperature T
a
(
C)
Output voltage V
O
(V
)
400
400
200
200
800
800
1 000
1 000
600
600
0
0
10
40
10
30
20
40 30 20
Breakover voltage V
BO
(V)
Breakover current I
BO
(
A
)
T
a
= 25C
V
O
R
L
0
0.01
0.05 0.1
0.5 1
5
10
14
12
10
6
8
4
2
Load resistance R
L
(k
)
Output voltage V
O
(V
)
T
a
= 25C