1
Band Switching Diodes
Unit : mm
Internal Connection
Marking Symbol: M1X
MA3X075D
Silicon epitaxial planar type
For band switching
I Features
Low forward dynamic resistance r
f
Less voltage dependence of diode capacitance C
D
Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
I Absolute Maximum Ratings T
a
= 25
C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
35
V
Forward current (DC)
I
F
100
mA
Operating ambient temperature
*
T
opr
-25 to +85
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 33 V
0.01
100
nA
Forward voltage (DC)
V
F
I
F
= 100 mA
0.92
1.0
V
Diode capacitance
C
D
V
R
= 6 V, f = 1 MHz
0.9
1.2
pF
Forward dynamic resistance
*
r
f
I
F
= 2 mA, f = 100 MHz
0.65
0.85
I Electrical Characteristics T
a
= 25
C
Note) 1
Each characteristic is a standard for individual diodes
2
Rated input/output frequency: 100 MHz
3. * : r
f
measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
Note) * : Maximum ambient temperature during operation
JEDEC : TO-236
EIAJ: SC-59A
Mini Type Package (3-pin)
1 : Cathode 1
2 : Cathode 2
3 : Anode 1, 2
1
2
3
2.8
+ 0.2
- 0.3
1.5
+ 0.25
- 0.05
0.65
0.15
0.65
0.15
3
1
2
0.95
0.95
1.9
0.2
0.4
+
0.1
-
0.05
1.1
+
0.2
-
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+
0.1
-
0.06
1.45
0.1 to 0.3
2.9
+
0.2
-
0.05
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