Switching Diodes
1
Publication date: July 2002
SKF00063AED
MA3X100
(MA10100)
Silicon epitaxial planar type
For switching circuits
Features
High breakdown voltage: V
R
= 200 V
Small terminal capacitance
Absolute Maximum Ratings T
a
= 25C
0.3
2.0
0.2
1.3
0.1
(0.65)
1
3
2
(0.65)
0.9
0.1
2.1
0.1
1.25
0.1
0 to 0.1
(0.15)
(0.425)
5
5
+0.1
0
0.15
+0.1
0.05
Unit: mm
1: Anode
2: N.C.
3: Cathode
SMini3-F1 Package
Marking Symbol: M3A
Internal Connection
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
200
V
Repetitive peak reverse voltage
V
RRM
250
V
Average forward current
I
F(AV)
100
mA
Repetitive peak forward current
I
FRM
225
mA
Non-repetitive peak forward-
I
FSM
500
mA
surge-current
*
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) *: t
= 1 s
3
2
1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 200 V
1.0
A
Forward voltage (DC)
V
F
I
F
= 100 mA
1.2
V
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz
3.0
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA
60
ns
I
rr
= 1 mA , R
L
= 100
Electrical Characteristics T
a
= 25C 3C
Note) 1. Rated input/output frequency: 20 MHz
2. *: t
rr
measuring instrument
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 s
t
r
= 0.35 ns
= 0.05
I
F
= I
R
= 10 mA
R
L
= 100
10%
Input Pulse
Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) The part number in the parenthesis shows conventional part number.
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and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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electronic equipment (such as office equipment, communications equipment, measuring instru-
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Consult our sales staff in advance for information on the following applications:
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the latest specifications satisfy your requirements.
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mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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2002 JUL
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