MA649
Silicon planer type (cathode common)
For switching
s
Features
q
High reverse voltage V
R
q
Low forward voltage V
F
q
Fast reverse recovery time t
rr
s
Absolute Maximum Ratings
(Ta= 25C)
Unit : mm
1 : Anode
2 : Cathode
(common)
3 : Anode
TO-220F(a) (TO-220 Full-Pack Package)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
-0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
Condition
V
RRM
= 200V, T
C
= 25C
V
RRM
= 200V, T
j
=150C
I
F
= 2.5A, T
C
= 25C
I
F
=1A, I
R
=1A
Flat direct current between junction and case
Unit
A
mA
V
ns
C/W
C/W
Symbol
I
RRM1
I
RRM2
V
F
t
rr
*
R
th(j-c)
*
R
th(j-a)
Note 1. Rated input/output frequency : 10MHz
2. * t
rr
measuring circuit
s
Electrical Characteristics
(Ta= 25C)
Unit
V
V
A
A
C
C
* Sine half wave : 10ms/cycle
Symbol
V
RRM
V
RSM
I
F(AV)
I
FSM
*
T
j
T
stg
Rating
200
200
5
30
40 to +150
40 to +150
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Fast Recovery Diodes (FRD)
MA111
Parameter
Repetitive peak reverse current
Forward voltage (DC)
Reverse recovery time
Thermal resistance
min
typ
max
100
6
1
100
3
63
50
50
5.5
D.U.T
t
rr
0.1
I
R
I
F
I
R
s
Internal Connection
1
2
3
I
F(AV)
T
C
P
D(AV)
I
F(AV)
I
R
V
R
I
F
V
F
Fast Recovery Diodes (FRD)
MA649
R
th(t)
t
Time t (s)
Thermal resistance R
th
(C/W
)
10
2
10
1
1
10
10
2
10
4
10
3
10
2
10
1
1
10
10
2
10
3
10
4
Without heat sink
10
0
50
100
150
200
250
300
10
7
10
6
10
5
10
4
10
3
10
2
Ta=150C
100C
25C
Reverse voltage V
R
(V)
Reverse current I
R
(nA
)
Average forward current I
F(AV)
(A)
Average forward current P
D(AV)
(W
)
0
12
10
8
6
4
2
0
1
2
3
4
5
6
t
0
/t
1
=1/6
1/3
1/2
t
1
t
0
DC
Case temperature T
C
(C)
Average forward current I
F(AV)
(A
)
0
2
1
3
5
4
6
30
50
100
150
t
0
/t
1
=1/2
1/3
t
1
t
0
1/6
DC
0.01
0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
100
T
C
=25C
Ta=150C
100C
25C
Forward voltage V
F
(V)
Forward current I
F
(A
)
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