1
Band Switching Diodes
Unit : mm
MA2C858
Silicon epitaxial planar type
For band switching
I Features
Extra-small DHD envelope, allowing to insert into a 5 mm pitch
hole.
Less voltage dependence of the terminal capacitance C
t
Low forward dynamic resistance r
f
Optimum for a band switching of a tuner
I Absolute Maximum Ratings T
a
= 25
C
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
35
V
Forward current (DC)
I
F
100
mA
Operating ambient temperature
T
opr
-25 to +85
C
Storage temperature
T
stg
-55 to +100
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
*
I
R
V
R
= 33 V
100
nA
Forward voltage (DC)
V
F
I
F
= 100 mA
1
V
Terminal capacitance
C
t
V
R
= 6 V, f = 1 MHz
1.2
pF
Forward dynamic resistance
r
f
I
F
= 2 mA, f = 100 MHz
0.9
I Electrical Characteristics T
a
= 25
C
Note) 1
Rated input/output frequency: 100 MHz
2
* : Measurement in light shielded condition
1 : Cathode
2 : Anode
JEDEC : DO-34
Type No.
MA2C858
Color
1st Band
Yellow
2nd Band
Yellow
I Cathode Indication
1st Band
2nd Band
0.45 max.
1.75 max.
13 min.
0.2 max.
0.2 max.
13 min.
2.2
0.3
COLORED BAND
INDICATES
CATHODE
2
1
Band Switching Diodes
2
MA2C858
I
F
V
F
r
f
f
r
f
f
I
R
T
a
I
R
V
R
r
f
f
r
f
I
F
C
t
V
R
10
-2
0
0.2
0.4
0.6
0.8
1.0
10
-1
1
10
10
2
Forward voltage V
F
(V)
Forward current I
F
(mA
)
T
a
= 85C 25C
- 25C
10
-3
0
10
20
30
40
50
10
-2
10
-1
1
10
10
2
Reverse voltage V
R
(V)
Reverse current I
R
(nA
)
T
a
= 85C
25
C
10
-3
0
40
80
120
160
10
-2
10
-1
1
10
10
2
Ambient temperature T
a
(
C)
Reverse current I
R
(nA
)
V
R
= 25 V
10 V
0
1
2
4
6
8
10
100
3
30
300
1 000
Frequency f (MHz)
Forward dynamic resistance r
f
(
)
I
F
= 2 mA
T
a
= 25C
0
1
2
1
3
5
4
6
10
100
3
30
300
1 000
Frequency f (MHz)
Forward dynamic resistance r
f
(
)
I
F
= 3 mA
T
a
= 25C
r
f
Tester: TDC-121A
0
10
0.4
0.2
0.6
1.0
0.8
1.2
100
1 000
30
300
3 000
10 000
Frequency f (MHz)
Forward dynamic resistance r
f
(
)
I
F
= 3 mA
T
a
= 25C
r
f
Tester: TDC-121A
0
0.1
1
2
3
4
1
10
0.3
3
30
100
Forward current I
F
(mA)
Forward dynamic resistance r
f
(
)
f
= 100 MHz
T
a
= 25C
0.4
0.8
1.2
1.6
0
0
10
20
30
40
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF
)
f
= 1 MHz
T
a
= 25C
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