Schottky Barrier Diodes (SBD)
1
Publication date: August 2001
SKH00043AED
MA3D750, MA3D750A
(MA7D50, MA7D50A)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
I Features
Low forward voltage V
F
High dielectric breakdown voltage: > 5 kV
Easy-to-mount, due to its V cut lead end
TO-220D-A1 package
I Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Repetitive peak
MA3D750
V
RRM
40
V
reverse-voltage
MA3D750A
45
Average forward current
I
F(AV)
10
A
Non-repetitive peak forward-
I
FSM
120
A
surge-current
*
Junction temperature
T
j
-40 to +125
C
Storage temperature
T
stg
-40 to +125
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC) MA3D750
I
R
V
R
= 40 V, T
C
= 25C
3
mA
MA3D750A
V
R
= 45 V, T
C
= 25C
3
Forward voltage (DC)
V
F
I
F
= 5 A, T
C
= 25C
0.55
V
High voltage rectification
R
th(j-c)
Smoothed current (between junction and case)
3
C/W
I Electrical Characteristics T
a
= 25C
Internal Connection
2
3
1
Unit: mm
1 : Anode
2 : Cathode
3 : Anode
TO-220D-A1 Package
1.4
0.2
1.6
0.2
0.8
0.1
0.55
0.15
2.54
0.30
5.08
0.50
1
2
3
2.6
0.1
2.9
0.2
4.6
0.2
3.2
0.1
3.0
0.5
9.9
0.3
15.0
0.5
13.7
0.2
4.2
0.2
Solder Dip
Note) *: Half sine wave; 10 ms/cycle
Note) Rated input/output frequency: 150 MHz
Note) The part number in the parenthesis shows conventional part number.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
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2001 MAR
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