Composite Transistors
1
Publication date: June 2002
SJJ00256AED
NP0A547
Silicon NPN epitaxial planar transistor
For high-speed switching
Features
SSS-Mini type package, reduction of the mounting area and assem-
bly cost by one half
Maximum package height (0.4 mm) contributes to develop thinner
equipments
Basic Part Number of Element
2SC3707 2 elements
1: Base (Tr1)
4: Collector (Tr2)
2: Emitter (Tr1)
5: Emitter (Tr2)
3: Base (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Unit: mm
Internal Connection
Marking Symbol: 1R
Absolute Maximum Ratings T
a
= 25C
3
4
Tr1
Tr2
1
6
5
2
Note) *: Measuring on substrate at 17 mm
10 mm 1 mm
Parameter
Symbol
Rating
Unit
Tr1
Collector to base voltage
V
CBO
10
V
Collector to emitter voltage
V
CEO
7
V
Emitter to base voltage
V
EBO
2
V
Collector current
I
C
10
mA
Tr2
Collector to base voltage
V
CBO
10
V
Collector to emitter voltage
V
CEO
7
V
Emitter to base voltage
V
EBO
2
V
Collector current
I
C
10
mA
Overall
Total power dissipation
P
T
50
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
0 to 0.02
6
5
4
1
2
3
1.00
0.05
(0.10)
0.10
1.00
0.05
Display at No.1 lead
0.80
0.05
0.10
(0.35)
(0.35)
0.37
+0.03 -
0.02
0.12
+0.03
-0.02
NP0A547
3
SJJ00256AED
P
C
T
a
I
C
V
CE
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
f
T
I
C
C
ob
V
CB
GUM
I
C
NF
I
C
0
160
40
120
80
0
100
75
25
50
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
2.4
2.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
T
a
= 25C
45
A
40
A
35
A
20
A
30
A
25
A
15
A
10
A
5
A
I
B
= 50 A
Collector current I
C
(mA
)
Collector to emitter voltage V
CE
(V)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
= 1 V
T
a
= 75C
-25C
25
C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector to emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0.1
1
10
100
0.3
3
30
0
240
200
160
120
80
40
V
CE
= 1 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0.1
1
10
100
0.3
3
30
0
12
10
8
6
4
2
V
CE
= 1 V
f
= 800 MHz
T
a
= 25C
Transition frequency f
T
(GHz
)
Collector current I
C
(mA)
0.1
1
10
100
0.3
3
30
0
1.2
1.0
0.8
0.6
0.4
0.2
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
1
10
100
0.3
3
30
0
24
20
16
12
8
4
V
CE
= 1 V
f
= 800 MHz
T
a
= 25C
Maximum unilateral power gain GUM
(dB
)
Collector current I
C
(mA)
0.1
1
10
100
0.3
3
30
0
6
5
4
3
2
1
V
CE
= 1 V
(R
g
= 50 )
f
= 800 MHz
T
a
= 25C
Noise figure NF
(dB
)
Collector current I
C
(mA)
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the latest specifications satisfy your requirements.
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rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
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2002 MAY
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