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Электронный компонент: OH10004OH004

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689
GaAs Hall Devices
OH10004 (OH004)
GaAs Hall Device
Magnetic sensor
I Features
Hall voltage: typ. 150 mV (V
C
= 6 V, B = 0.1 T)
Input resistance: typ. 0.85 k
Satisfactory linearity of GaAs hall voltage with respect to the
magnetic field
Small temperature coefficient of the hall voltage: - 0.06%/C
Mini type (4-pin) package with positioning projection. Allowing
automatic insertion through the magazine package.
I Applications
Various hall motor (VCR, phonograph, VD, CD, and FDD)
Automotive equipment
Industrial equipment
I Absolute Maximum Ratings T
a
= 25C
Unit : mm
1 : V
H
Output
(-) side
2 : V
C
Input
(-) side
3 : V
H
Output
(+) side
4 : V
C
Input
(+) side
HallT4Mini-CON-G1 Package
Parameter
Symbol
Rating
Unit
Control voltage
V
C
12
V
Power dissipation
P
D
150
mW
Operating ambient temperature
T
opr
-30 to +125
C
Storage temperature
T
stg
-55 to +125
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Hall voltage
*1, 4
V
H
V
C
= 6 V, B = 0.1 T
130
150
170
mV
Unequilibrium ratio
*2, 4
V
HO
/V
H
V
C
= 6 V, B = 0 T/B = 0.1 T
12
%
Input resistance
R
IN
I
C
= 1 mA, B = 0 T
0.50
0.85
k
Output resistance
R
OUT
I
C
= 1 mA, B = 0 T
5
k
Temperature coefficient of hall voltage
I
C
= 6 mA, B = 0.1 T
-0.06
%/
C
Temperature coefficient of input
I
C
= 1 mA, B = 0 T
0.3
%/
C
resistance
Linearity of hall voltage
*3
I
C
= 6 mA, B = 0.1 T/0.5 T
2
%
I Electrical Characteristics T
a
= 25C
1.45
0.05
0.5
0.1
0.6
0.05
0.26
0.05
0 to 0.15
5
5
0.3 max.
0.2 max.
0.9
0.05
2.85
0.25
1.45
0.05
0.6
0.1
0.8
0.1
3
2
1
4
1.0
0.025
Class
HQ
HR
IQ
IR
KQ
KR
V
H
(mV)
130 to 158
142 to 170
130 to 158
142 to 170
130 to 158
142 to 170
V
HO
/V
H
(%)
-5 to +5
+2 to +12
-2 to -12
Marking Symbol
4HQ
4HR
4IQ
4IR
4KQ
4KR
Marking Symbol: 4
Note) *1 : V
H
=
V
H
+
+V
H
-
2
*2 : Unequilibrium ratio is a percentage of V
HO
with respect to V
H
.
*3 : The linearity
of V
H
is a percentage of a difference between cumulative sensitivity of K
H1
and K
H5
which are measured
respectively at B = 0.1 T and 0.5 T to their average. That is,
=
K
H5
-K
H1
(the cumulative sensitivity K
H
=
V
H
)
1/2(K
H1
+K
H5
)
I
C
B
*4 : V
H
, V
HO
/V
H
rank classification
Note) The part number pa-
renthesis shows conven-
tional part number.
GaAs Hall Devices
690
OH10004
P
D
T
a
R
IN
T
a
V
H
T
a
V
H
B
V
H
I
C
0
40
80
120
160
200
180
140
100
60
20
0
20
40
80
60
140
120
100
160
Ambient temperature T
a
(
C)
Power dissipation P
D
(mW
)
V
H
V
C
I Typical Drive Circuit
+9 V
+V
+9 V
-9 V
-V
-9 V
+
-
3
1
2
4
0
-40
0
40
80
120
40
80
120
160
200
240
Ambient temperature T
a
(
C)
Hall voltage V
H
(mV
)
B
= 1 kG
I
C
= 6 mA
0
-40
0
40
80
120
800
1 600
1 400
1 200
1 000
600
400
200
Ambient temperature T
a
(
C)
Input resistance R
IN
(
)
B
= 0
I
C
= 1 mA
0
0
1.2
0.2
1.0
0.4
0.6
0.8
800
400
1 600
1 200
600
200
1 000
1 400
Magnetic flux density B (T)
Hall voltage V
H
(mV
)
V
C
= 6 V
T
a
= 25C
0
0
4
12
16
2
6
10
14
8
40
80
120
160
200
240
280
320
Control current I
C
(mA)
Hall voltage V
H
(mV
)
B
= 1 kG
T
a
= 25C
0
0
4
12
16
2
6
10
14
8
40
80
120
160
200
240
280
320
Control voltage V
C
(V)
Hall voltage V
H
(mV
)
B
= 1 kG
T
a
= 25C
Caution for Safety
DANGER
Please read the following notes before using the datasheets
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tor products best suited to their applications.
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Consult our sales staff in advance for information on the following applications:
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company.
Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
2001 MAR