1
Transmissive Photosensors (Photo Interrupters)
;;
;;
3.8
4.0
+0.1
0.2
1.45
1.45
(C0.3)
(C0.5)
0.9
*2.54
*2.54
2-0.25
1
3
2
4
2-0.4
2.8
(1.0)
5.1
3.9
4.0 min.
Device
center
Gate the rest
0.3 max.
Not soldered
1.0 max.
(Note)
1. Tolerance unless otherwise specified is
0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
1.5
+0.1
0
A'
A
SEC. A-A'
Slit width
(0.5)
(1.5)
Unit : mm
Pin connection
2
4
1
3
;;
;;;
;;
more than 1mm
Soldering bath
;;
;
;
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
CNZ1002 (ON1002)
Photo Interrupter
For contactless SW, object detection
Overview
CNZ1002 is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
Electrical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Input
Forward voltage (DC)
V
F
I
F
= 20mA
1.2
1.4
V
characteristics Reverse current (DC)
I
R
V
R
= 3V
10
A
Output characteristics Collector cutoff current
I
CEO
V
CE
= 20V
100
nA
Transfer
Collector current
I
C
V
CE
= 5V, I
F
= 1.5mA
65
480
A
characteristics
Collector to emitter saturation voltage V
CE(sat)
I
F
= 3mA, I
C
= 30
A
0.4
V
Response time
t
r
, t
f
*
V
CC
= 5V, I
C
= 0.1mA, R
L
= 1000
35
s
*
Switching time measurement circuit
Features
Ultraminiature : 4.0
3.8 mm (height : 5.1 mm)
Fast response : t
r
, t
f
= 35
s (typ.)
Highly precise position detection : 0.25 mm
Gap width : 0.9 mm
*1
Input power derating ratio is
1.0mW/C at Ta
25C.
*2
Output power derating ratio is
1.0mW/C at Ta
25C.
*3
Soldering time is within 5 seconds.
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol Ratings
Unit
Input (Light
Reverse voltage (DC)
V
R
6
V
emitting diode)
Forward current (DC)
I
F
50
mA
Power dissipation
P
D
*1
75
mW
Collector current
I
C
20
mA
Output (Photo Collector to emitter voltage
V
CEO
35
V
transistor)
Emitter to collector voltage
V
ECO
6
V
Collector power dissipation
P
C
*2
75
mW
Operating ambient temperature
T
opr
25 to +85
C
Temperature
Storage temperature
T
stg
40 to +100
C
Soldering temperature
T
sol
*3
260
C
Note) The part number in the parenthesis shows conventional part number.
Caution for Safety
DANGER
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc-
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Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
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material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
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GaAs-containing products.
2001 MAR
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