1
Publication date: April 2004
SHG00032BED
Transmissive Photosensors (Photo lnterrupters)
CNZ1120
(ON1120)
Photo lnterrupter
For contactless SW, object detection
Overview
CNZ1120 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
Features
Wide gap between emitting and detecting elements, suitable for
thick plate detection
Gap: 10 mm
Fast response: t
r
, t
f
= 6 s (typ.)
The external case is molded using visible light cutoff resin. The case
has no openings, so the photosensor is not easily susceptible to
output attenuation resulting from dust or particles
Absolute Maximum Ratings T
a
= 25C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Input
Forward voltage
V
F
I
F
= 50 mA
1.2
1.5
V
characteristics Reverse current
I
R
V
R
= 3 V
10
A
Output
Collector-emitter cutoff current
I
CEO
V
CE
= 10 V, I
F
= 0 mA, I
D
= 0 mA
200
nA
characteristics (Base open)
Collector-emitter capacitance
C
C
V
CE
= 10 V, f = 1 MHz
5
pF
Transfer
Collector current
I
C
V
CE
= 10 V, I
F
= 20 mA, R
L
= 100
1.0
mA
characteristics Collector-emitter saturation voltage V
CE(sat)
I
F
= 50 mA, I
C
= 0.1 mA
0.4
V
Rise time
*
t
r
V
CC
= 10 V, I
C
= 1 mA, R
L
= 100
6
s
Fall time
*
t
f
6
s
(Note) ( ) Dimension is reference
10.0
0.3
(15.5)
(2.54)
2-C0.5
19.0
0.35
A
A'
SEC. A-A'
2-0.45
2
3
1
4
6.2
0.25
14.0
0.2
3.0 min.
3.0
0.2
(2.0)
(Input pulse)
(Output pulse)
50
R
L
t
r
: Rise time
t
f
: Fall time
V
CC
Sig. out
10%
90%
Sig. in
t
r
t
f
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-014 Package
Note) *1: Input power derating ratio is 1.88 mW/
C at
T
a
25C.
*2: Output power derating ratio is 2.50 mW/
C
at T
a
25C.
Electrical-Optical Characteristics T
a
= 25C 3C
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Note) The part number in the parenthesis shows conventional part number.
Parameter
Symbol
Rating
Unit
Input (Light
Reverse voltage
V
R
3
V
emitting diode) Forward current
I
F
50
mA
Power dissipation
*1
P
D
75
mW
Output (Photo Collector-emitter voltage
V
CEO
20
V
transistor)
(Base open)
Emitter-collector voltage
V
ECO
5
V
(Base open)
Collector current
I
C
20
mA
Collector power dissipation
*2
P
C
100
mW
Temperature
Operating ambient temperature
T
opr
-5 to +60
C
Storage temperature
T
stg
-15 to +65
C
2003 SEP
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
Caution for Safety
DANGER
This product contains Gallium Arsenide (GaAs).
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dis-
solve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
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