1
Reflective Photosensors (Photo Reflectors)
CNB1009 (ON2173)
Reflective Photosensor
Features
Fast response : t
r
, t
f
= 6
s (typ.)
Small size, light weight
2-2.3
2.2
2-9.5
0.2
19.0
0.3
(4.0)
(1.0)
1.0
(15.5)
4.0
0.2
6.5
0.3
2
3
1
4
Unit : mm
Pin connection
12.0
0.3
T.R
LED
1.0
7.4
0.2
9.5
0.3
2.5 min.
(2.54)
1.0
1
4
3
2
;;
;
(Note) ( ) Dimension is reference
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R
L
I
F
I
C
V
CC
d = 5 mm
Standard white paper (Reflective ratio 90%)
10%
90%
t
r
t
f
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol Ratings
Unit
Input (Light
Reverse voltage (DC)
V
R
3
V
emitting diode)
Forward current (DC)
I
F
50
mA
Power dissipation
P
D
*1
75
mW
Collector to emitter voltage
V
CEO
20
V
Output (Photo Emitter to collector voltage
V
ECO
5
V
transistor)
Collector current
I
C
30
mA
Collector power dissipation
P
C
*2
100
mW
Temperature
Operating ambient temperature
T
opr
25 to +85
C
Storage temperature
T
stg
30 to +100
C
Electrical Characteristics
(Ta = 25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Input
Forward voltage (DC)
V
F
I
F
= 50mA
1.2
1.5
V
characteristics
Reverse current (DC)
I
R
V
R
= 3V
10
A
Capacitance between pins
C
t
V
R
= 0V, f
= 1MHz
50
pF
Output characteristics Collector cutoff current
I
CEO
V
CE
= 10V
0.2
A
Collector to emitter capacitance
C
C
V
CE
= 10V, f= 1MHz
5
pF
Transfer
Collector current
I
C
*1
V
CC
= 10V, I
F
= 20mA, R
L
= 100
100
500
A
characteristics Response time
t
r
*2
, t
f
*3
V
CC
= 10V, I
C
= 1mA, R
L
= 100
6
s
Collector to emitter saturation voltage V
CE(sat)
I
F
= 50mA, I
C
= 0.1mA
0.3
V
*1
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
*2
Time required for the collector current to increase from
10% to 90% of its final value.
*3
Time required for the collector
current to decrease from 90%
to 10% of its initial value.
Overview
CNB1009 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Applications
Detection of paper, film and cloth
Optical mark reading
Detection of coin and bill
Detection of position and edge
Start, end mark detection of magnetic tape
*1
Input power derating ratio is
1.0 mW/C at Ta
25C.
*2
Output power derating ratio is
1.34 mW/C at Ta
25C.
Note) The part number in the parenthesis shows conventional part number.
Caution for Safety
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Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
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material in powder or vapor form is harmful to human
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Observe the relevant laws and regulations when dispos-
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2001 MAR
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