Transistors with built-in Resistor
1
Publication date: October 2003
SJH00001BED
UNR111x Series
(UN111x Series)
Silicon PNP epitaxial planar transistor
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Resistance by Part Number
(R
1
)
(R
2
)
UNR1110 (UN1110)
47 k
UNR1111 (UN1111)
10 k
10 k
UNR1112 (UN1112)
22 k
22 k
UNR1113 (UN1113)
47 k
47 k
UNR1114 (UN1114)
10 k
47 k
UNR1115 (UN1115)
10 k
UNR1116 (UN1116)
4.7 k
UNR1117 (UN1117)
22 k
UNR1118 (UN1118)
0.51 k
5.1 k
UNR1119 (UN1119)
1 k
10 k
UNR111D (UN111D)
47 k
10 k
UNR111E (UN111E)
47 k
22 k
UNR111F (UN111F)
4.7 k
10 k
UNR111H (UN111H)
2.2 k
10 k
UNR111L (UN111L)
4.7 k
4.7 k
Absolute Maximum Ratings T
a
= 25C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) The part numbers in the parenthesis show conventional part number.
6.9
0.1
2.5
0.1
(1.0)
(1.0)
(1.5)
(0.85)
0.45
0.05
0.55
0.1
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(0.4)
3.5
0.1
4.5
0.1
4.1
0.2
2.4
0.2
1.25
0.05
2.0
0.2
1.0
0.1
(1.5)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-50
V
Collector-emitter voltage (Base open)
V
CEO
-50
V
Collector current
I
C
-100
mA
Total power dissipation
P
T
400
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
2
UNR111x Series
SJH00001BED
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -10 A, I
E
= 0
-50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -50 V, I
E
= 0
- 0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -50 V, I
B
= 0
- 0.5
A
Emitter-base
UNR1111
I
EBO
V
EB
= -6 V, I
C
= 0
- 0.5
mA
cutoff current UNR1112/1114/111D/111E
- 0.2
(Collector open) UNR1113
- 0.1
UNR1110/1115/1116/1117
- 0.01
UNR111F/111H
-1.0
UNR1119
-1.5
UNR1118/111L
-2.0
Forward current UNR1111
h
FE
V
CE
= -10 V, I
C
= -5 mA
35
transfer ratio
UNR1112/111E
60
UNR1113/1114
80
UNR1110
*
/1115
*
/1116
*
/
160
460
1117
*
UNR1118/111L
20
UNR1119/111D/111F/111H
30
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -10 mA, I
B
= - 0.3 mA
- 0.25
V
Output voltage high-level
V
OH
V
CC
= -5 V, V
B
= - 0.5 V, R
L
= 1 k
-4.9
V
Output voltage low-level
V
OL
V
CC
= -5 V, V
B
= -2.5 V, R
L
= 1 k
- 0.2
V
UNR1113
V
CC
= -5 V, V
B
= -3.5 V, R
L
= 1 k
UNR111D
V
CC
= -5 V, V
B
= -10 V, R
L
= 1 k
UNR111E
V
CC
= -5 V, V
B
= -6 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= -10 V, I
E
= 2 mA, f = 200 MHz
80
MHz
Input resistance UNR1111/1114/1115
R
1
-30%
10
+30%
k
UNR1112/1117
22
UNR1110/1113/111D/111E
47
UNR1116/111F/111L
4.7
UNR1118
0.51
UNR1119
1
UNR111H
2.2
Resistance ratio UNR1111/1112/1113/111L
R
1
/R
2
0.8
1.0
1.2
UNR1114
0.17
0.21
0.25
UNR1118/1119
0.08
0.1
0.12
UNR111D
4.7
UNR111E
2.14
UNR111F
0.47
UNR111H
0.17
0.22
0.27
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification (UNR1110/1115/1116/1117)
3
UNR111x Series
SJH00001BED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
P
T
T
a
Common characteristics chart
Characteristics charts of UNR1110
0
0
-12
-2
-10
-4
-8
-6
-120
-100
-80
-60
-40
-20
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
-0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
100
200
300
400
500
0
40
80
120
160
Ambient temperature T
a
(
C)
Total power dissipation P
T
(mW
)
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
C
4
UNR111x Series
SJH00001BED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR1111
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
40
80
120
160
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR1112
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75
C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75
C
25
C
-25C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
5
UNR111x Series
SJH00001BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR1113
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(A
)
Input voltage V
IN
(V)
V
O
=
-5 V
T
a
= 25
C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
6
UNR111x Series
SJH00001BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR1114
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.1
- 0.1
-1
-10
-100
-1 000
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR1115
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
-0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
7
UNR111x Series
SJH00001BED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR1116
0
- 0.1
6
5
4
3
2
1
-1
-10
-10
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
=
-1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
8
UNR111x Series
SJH00001BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR1117
0
0
-12
-2
-10
-4
-8
-6
-120
-100
-80
-60
-40
-20
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
0
-0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR1118
0
0
-12
-2
-10
-4
-8
-6
-240
-200
-160
-120
-80
-40
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= - 1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.5 mA
- 0.6 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
40
80
120
160
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
9
UNR111x Series
SJH00001BED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR1119
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
0
0
-12
-2
-10
-4
-8
-6
-240
-200
-160
-120
-80
-40
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.4 mA
- 0.3 mA
- 0.6 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.5 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
40
80
120
160
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f = 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= -0.2 V
T
a
= 25C
10
UNR111x Series
SJH00001BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR111D
0
0
-12
-2
-10
-4
-8
-6
-60
-50
-40
-30
-20
-10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= - 1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
-
0.01
- 0.1
-
0.1
-
1
-
10
-
100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
40
80
120
160
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=
-10 V
T
a
= 75C
25
C
-25C
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
-1.5
-10
-10
2
-10
3
-10
4
-4.0
-3.5
-3.0
-2.5
-2.0
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR111E
0
0
-12
-2
-10
-4
-8
-6
-60
-50
-40
-30
-20
-10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
=
-1.0 mA
- 0.9 mA
- 0.8 mA - 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
11
UNR111x Series
SJH00001BED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR111F
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
0
0
-12
-2
-10
-4
-8
-6
-240
-200
-160
-120
-80
-40
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.1 mA
- 0.2 mA
- 0.3 mA
- 0.4 mA
- 0.5 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
-1.5
-10
-10
2
-10
3
-10
4
-4.0
-3.5
-3.0
-2.5
-2.0
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
0
-1
40
80
120
160
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
12
UNR111x Series
SJH00001BED
C
ob
V
CB
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR111H
0
0
-12
-2
-10
-4
-8
-6
-120
-100
-80
-60
-40
-20
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
=
- 0.5 mA
- 0.3 mA
- 0.4 mA
- 0.2 mA
- 0.1 mA
-0.01
-1
-0.1
-1
-10
-100
-10
-100
-1 000
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-0.1
240
200
160
120
80
40
-1
-10
-100
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
0
-1
6
5
4
3
2
1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR111L
0
0
12
2
10
4
8
6
-240
-200
-160
-120
-80
-40
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
=
-1.0 mA
- 0.2 mA
- 0.4 mA
- 0.6 mA
- 0.8 mA
- 0.01
-1
- 0.1
-1
-10
-100
-10
-100
-1 000
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
240
200
160
120
80
40
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
13
UNR111x Series
SJH00001BED
C
ob
V
CB
V
IN
I
O
0
-1
6
5
4
3
2
1
-10
-100
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household
appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are re-
quired, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications
satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating,
the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be
liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as
redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physi-
cal injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
PDF 
ZIP