1
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Silicon PNP epitaxial planer transistor
For digital circuits
s
Features
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Resistance by Part Number
(R
1
)
(R
2
)
q
UN1121
2.2k
2.2k
q
UN1122
4.7k
4.7k
q
UN1123
10k
10k
q
UN1124
2.2k
10k
q
UN112X
0.27k
5k
q
UN112Y
3.1k
4.6k
s
Absolute Maximum Ratings
(Ta=25C)
1:Base
2:Collector
3:Emitter
M Type Mold Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
500
mA
Total power dissipation
P
T
600
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
6.9
0.1
0.55
0.1
0.45
0.05
1.0
0.1
1.0
2.5
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
0.1
2.0
0.2
2.4
0.2
1.25
0.05
4.1
0.2
4
.5
0.1
2.5
2.5
1
2
3
B
C
R1
R2
E
2
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
s
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
1
A
UN112X
I
CBO
V
CB
= 50V, I
E
= 0
0.1
Collector cutoff current
I
CEO
V
CE
= 50V, I
B
= 0
1
A
UN112X
I
CEO
V
CE
= 50V, I
B
= 0
0.5
UN1121
5
UN1122/112X/112Y
I
EBO
V
EB
= 6V, I
C
= 0
2
mA
UN1123/1124
1
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
50
V
UN1121
40
UN1122/112Y
h
FE
V
CE
= 10V, I
C
= 100mA
50
UN1123/1124
60
UN112X
20
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 100mA, I
B
= 5mA
0.25
UN112X
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
UN112Y
V
CE(sat)
I
C
= 50mA, I
B
= 5mA
0.15
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 500
4.9
V
Output voltage low level
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 500
0.2
V
Transition frequency
f
T
V
CB
= 10V, I
E
= 50mA, f = 200MHz
200
MHz
UN1121
2.2
UN1122
4.7
UN1123
R
1
(30%)
10
(+30%)
k
UN112X
0.27
UN112Y
3.1
Resistance ratio
0.8
1.0
1.2
UN1124
R
1
/R
2
0.22
UN112X
0.054
UN112Y
0.67
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Common characteristics chart
P
T
-- Ta
0
0
160
40
120
80
200
600
400
800
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
3
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Characteristics charts of UN1121
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UN1122
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
12
10
8
6
4
2
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
300
250
200
150
100
50
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
4
Transistors with built-in Resistor
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UN1123
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
UN1121/1122/1123/1124/112X/112Y
0
0.1 0.3
24
20
16
12
8
4
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
50
100
150
200
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
24
20
16
12
8
4
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
5
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
Characteristics charts of UN1124
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UN112X
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
300
250
200
150
100
50
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
350
250
150
50
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
24
20
16
12
8
4
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.6mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
240
200
160
120
80
40
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
6
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
C
ob
-- V
CB
V
IN
-- I
O
Characteristics charts of UN112Y
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
V
IN
-- I
O
0
1
24
20
16
12
8
4
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
0.01
0.1 0.3
0.1
1
10
0.03
0.3
3
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.2mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
240
200
160
120
80
40
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
1
24
20
16
12
8
4
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
0.01
0.1 0.3
0.1
1
10
0.03
0.3
3
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
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