1
Transistors with built-in Resistor
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Silicon NPN epitaxial planer transistor
For digital circuits
s
Features
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q
SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
s
Resistance by Part Number
Marking Symbol
(R
1
)
(R
2
)
q
UN9211
8A
10k
10k
q
UN9212
8B
22k
22k
q
UN9213
8C
47k
47k
q
UN9214
8D
10k
47k
q
UN9215
8E
10k
--
q
UN9216
8F
4.7k
--
q
UN9217
8H
22k
--
q
UN9218
8I
0.51k
5.1k
q
UN9219
8K
1k
10k
q
UN9210
8L
47k
--
q
UN921D
8M
47k
10k
q
UN921E
8N
47k
22k
q
UN921F
8O
4.7k
10k
q
UN921K
8P
10k
4.7k
q
UN921L
8Q
4.7k
4.7k
q
UNR921M
EL
2.2k
47k
q
UNR921N
EX
4.7k
47k
q
UNR921AJ
8X
100k
100k
q
UNR921BJ
8Y
100k
--
q
UNR921CJ
8Z
--
47k
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
125
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
55 to +125
C
1 : Base
2 : Emitter
3 : Collector
SSMini Type Pakage
1.6
0.15
1.6
0.1
1.0
0.1
0.75
0.15
0.45
0.1
0.5
0.3
0 to 0.1
0.5
0.8
0.1
0.4
0.4
0.2
+0.1 -0.05
0.15
+0.1 -0.05
1
2
3
0.2
0.1
B
C
R1
R2
E
Unit: mm
1 : Base
2 : Emitter
3 : Collector
SSMini Flat Type Pakage (J type)
1.60
+0.05
0.03
0.70
+0.05
0.03
0.12
+0.03
0.01
0 to 0.1
0.80
0.80
0.50
0.50
1.60
0.05
0.80
0.05
0.80
0.425 0.425
1.00
0.05
0.27
0.02
0.85
+0.05
0.03
2
Transistors with built-in Resistor
s
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
A
UN9211
0.5
UN9212/9214/921E/921D
0.2
UN9213/UNR921M/921N/UNR921AJ
0.1
UN9215/9216/9217/9210/UNR921BJ
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
UN921F/921K
1.0
UN9219
1.5
UN9218/921L/UNR921CJ
2.0
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UN9211
35
UN9212/921E
60
UN9213/9214/921M/UNR921AJ/921CJ
80
UN9215*/9216*/9217*/9210*/UNR921BJ h
FE
V
CE
= 10V, I
C
= 5mA
160
460
UN921F/921D/9219
30
UN9218/921K/921L
20
UN921N
80
400
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
4.9
V
Output voltage low level
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
0.2
UN9213/921K/UNR921BJ
V
OC
= 5V, V
B
= 3.5V, R
1
= 1k
0.2
UN921D
V
OL
V
CC
= 5V, V
B
= 10V, R
1
= 1k
0.2
V
UN921E
V
CC
= 5V, V
B
= 6V, R
L
= 1k
0.2
UNR921AJ
V
CC
= 5V, V
B
= 5V, R
L
= 1k
0.2
Transition frequency
f
T
V
CB
= 10V, I
E
= 2mA, f = 200MHz
150
MHz
UN9211/9214/9215/921K
10
UN9212/9217
22
UN9213/921D/921E/9210
47
UN9216/921F/921L/UNR921N
R
1
(30%)
4.7
(+30%)
k
UN9218
0.51
UN9219/UNR921M
1
UNR921AJ/921BJ
100
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
* h
FE
rank classification (UN9215/9216/9217/9210)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
3
Transistors with built-in Resistor
s
Electrical Characteristics (continued)
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
UN9211/9212/9213/921L
0.8
1.0
1.2
UN9214
0.17
0.21
0.25
UN9218/9219
0.08
0.1
0.12
UN921D
4.7
UN921E
R
1
/R
2
2.14
UN921F
0. 47
UN921K
2.13
UN921M
0.047
UN921N
0.1
UNR921AJ
1.0
Resistance between Emitter to Base
UNR921CJ
R
2
30%
47
30%
k
Resis-
tance
ratio
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
4
Transistors with built-in Resistor
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Common characteristics chart
P
T
-- Ta
Characteristics charts of UN9211
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
0
160
20
60
100
140
40
120
80
150
125
100
75
50
25
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
5
Transistors with built-in Resistor
UN1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
Characteristics charts of UN9212
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UN9213
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.9mA
0.8mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
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