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Электронный компонент: UNA0228UN228

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1
Small Signal Transistor Arrays
UNA0228
(UN228)
Transistor array to drive the small motor
s
Features
q
Small and lightweight
q
Low power consumption
q
Low-voltage drive
q
With 4 elements incorporated
s
Applications
q
For motor drives
q
Small motor drive circuits in general
s
Absolute Maximum Ratings
(Ta=25
3C)
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
12
V
Collector to emitter voltage
V
CEO
10
V
Emitter to base voltage
V
EBO
7
V
Collector current
I
C
1
A
Peak collector current
I
CP
2.5
A
Total power dissipation
P
T
*
0.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
SO10-G1 Package
Note:
marks used above: +: NPN part, : PNP part
* T
C
= 25C only when the elements are active
12
45
0.2
+0.1
0.0
(0.5)
0.5
0.2
1
2
3
4
5
10
9
8
7
6
0.4
0.1
1.5
0.1
1.5
+0.2 0.1
(0.8)
12
0.9
0.1
5.5
0.3
7.7
0.3
6.5
0.3
1
2
3
4
5
10
9
8
7
6
Note.) The Part number in the Parenthesis shows conventional part number.
2
Small Signal Transistor Arrays
s
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
(NPN) I
C
= 10
A, I
E
= 0
12
V
(PNP) I
C
= 10
A, I
E
= 0
12
Collector to emitter voltage
V
CEO
(NPN) I
C
= 1mA, I
B
= 0
10
V
(PNP) I
C
= 1mA, I
B
= 0
10
Emitter to base voltage
V
EBO
(NPN) I
E
= 10
A, I
C
= 0
7
V
(PNP) I
E
= 10
A, I
C
= 0
7
Collector cutoff current
I
CBO
(NPN) V
CB
= 10V, I
E
= 0
1
A
(PNP) V
CB
= 10V, I
E
= 0
1
Forward current transfer ratio
h
FE
(NPN) V
CE
= 1V, I
C
= 0.5A*
200
800
(PNP) V
CE
= 1V, I
C
= 0.5A*
200
800
Collector to emitter saturation voltage
V
CE(sat)
(NPN) I
C
= 1A, I
B
= 30mA*
0.2
0.3
V
(PNP) I
C
= 1A, I
B
= 30mA*
0.2
0.3
Transition frequency
f
T
(NPN) V
CB
= 6V, I
E
= 50mA, f = 200MHz
150
MHz
(PNP) V
CB
= 6V, I
E
= 50mA, f = 200MHz
150
Collector output capacitance
C
ob
(NPN) V
CB
= 10V, I
E
= 0, f = 1MHz
50
pF
(NPN) V
CB
= 10V, I
E
= 0, f = 1MHz
65
Forward voltage
V
F
(NPN) I
F
= 1A
1.5
V
(PNP) I
F
= 1A
1.5
*Pulse measurement
UNA0228
Characteristics charts of PNP transistor block
P
T
-- Ta
I
C
-- V
CE
I
C
-- V
BE
0
0
160
20
60
100
140
40
120
80
0.6
0.5
0.4
0.3
0.2
0.1
Ambient temperature Ta (C)
Total power dissipation P
T
(W
)
0
0
12
2
10
4
8
6
4.8
4.0
3.2
2.4
1.6
0.8
Collector current I
C
(A
)
Collector to emitter voltage V
CE
(V)
Ta=25C
2mA
4mA
6mA
8mA
12mA
10mA
I
B
= 14mA
0
6
5
4
3
2
1
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0
2.4
0.4
2.0
0.8
1.6
1.2
V
CE
= 1V
Ta=75C
25C
25C
3
Small Signal Transistor Arrays
UNA0228
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
Characteristics charts of NPN transistor block
P
T
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
0.001
0.003
0.01 0.03
0.01
0.03
0.1
0.3
1
3
10
0.1 0.3
1
3
10
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=100/3
Ta=75C
25C
25C
0
0.01 0.03
600
500
400
300
200
100
0.1 0.3
1
3
10
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
=1V
Ta=75C
25C
25C
0
0.1 0.3
240
200
160
120
80
40
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
0
0
160
20
60
100
140
40
120
80
0.6
0.5
0.4
0.3
0.2
0.1
Ambient temperature Ta (C)
Total power dissipation P
T
(W
)
0
0
12
2
10
4
8
6
4.8
4.0
3.2
2.4
1.6
0.8
Collector current I
C
(A
)
Collector to emitter voltage V
CE
(V)
Ta=25C
2mA
4mA
6mA
8mA
10mA
12mA
I
B
=14mA
0
6
5
4
3
2
1
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0
2.4
0.4
2.0
0.8
1.6
1.2
V
CE
=1V
Ta=75C
25C
25C
0.001
0.003
0.01
0.03
0.01
0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=100/3
Ta=75C
25C
25C
0
0.01
0.03
600
500
400
300
200
100
0.1
0.3
1
3
10
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
=1V
Ta=75C
25C
25C
0
0.1
0.3
120
100
80
60
40
20
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
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2001 MAR