Small Signal Transistor Arrays
1
Publication date: April 2003
SJK00051BED
UNA0232
Silicon NPN epitaxial planar transistor
For motor drives
For small motor drive circuits in general
Features
Small and lightweight
Low power consumption
Low-voltage drive
With 4 elements incorporated
Absolute Maximum Ratings T
a
= 25C
Marking Symbol: UN232
Internal Connection
Unit: mm
1: Emitter
4: Base
8: Base
2: Collector
5: Collector
9: Collector
Emitter
6: Collector
Emitter
3: Base
7: Base
10: Emitter
SO10-G1 Package
Note) *: When the dissipation on one device is T
C
= 25C
12
45
0.2
+0.1
0.0
0.5
0.5
0.2
6
7
8
9
10
5
4
3
2
1
0.4
0.1
1.5
0.1
1.5
+0.2 0.1
0.8
12
0.9
0.1
5.5
0.3
7.7
0.3
6.5
0.3
9
10
Q2
Q4
Q1
Q3
8
8
6
5
4
3
2
1
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
12
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
1
A
Peak collector current
I
CP
2
A
Total power dissipation
*
P
T
0.5
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
UNA0232
2
SJK00051BED
Electrical Characteristics T
a
= 25C 3C
Q1, Q2
Q3, Q4
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
12
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 0.1 mA, I
B
= 0
10
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 5 V, I
C
= 0
0.8
1.6
mA
Forward current transfer ratio
*1
h
FE
V
CE
= 1 V, I
C
= 0.5 A
200
700
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 0.5 A, I
B
= 25 mA
0.10
0.15
V
Base-emitter resistance
*2
R
BE
3.3
4.7
6.1
k
Forward voltage
*1, 3
V
F
I
F
= 1 A
1.5
V
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
12
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 0.1 mA, I
B
= 0
10
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
1
A
Forward current transfer ratio
*1
h
FE
V
CE
= 1 V, I
C
= 0.5 A
200
700
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 0.5 A, I
B
= 25 mA
0.10
0.15
V
Forward voltage
*1, 3
V
F
I
F
= 1 A
1.5
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Application to the built-in resistance
*3: Application to the built-in diode
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2002 JUL
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