1
Transistors with built-in Resistor
UNR1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/
121D/121E/121F/121K/121L
(UN1211/1212/1213/1214/1215/1216/1217/1218/1219/1210/
121D/121E/121F/121K/121L)
Silicon NPN epitaxial planar transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Resistance by Part Number
(R
1
)
(R
2
)
G
UNR1211
10k
10k
G
UNR1212
22k
22k
G
UNR1213
47k
47k
G
UNR1214
10k
47k
G
UNR1215
10k
--
G
UNR1216
4.7k
--
G
UNR1217
22k
--
G
UNR1218
0.51k
5.1k
G
UNR1219
1k
10k
G
UNR1210
47k
--
G
UNR121D
47k
10k
G
UNR121E
47k
22k
G
UNR121F
4.7k
10k
G
UNR121K
10k
4.7k
G
UNR121L
4.7k
4.7k
I
Absolute Maximum Ratings
(Ta=25C)
1:
Base
2:
Collector
3:
Emitter
M-A1 Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
400
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
6.9
0.1
2.5
0.1
(1.0)
(1.0)
(1.5)
(0.85)
0.45
0.05
0.55
0.1
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(0.4)
3.5
0.1
4.5
0.1
4.1
0.2
2.4
0.2
1.25
0.05
2.0
0.2
1.0
0.1
(1.5)
B
C
R1
R2
E
Note) The part numbers in the parenthesis show conventional part number.
2
Transistors with built-in Resistor
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
A
UNR1211
0.5
UNR1212/1214/121E/121D
0.2
UNR1213
0.1
UNR1215/1216/1217/1210
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
UNR121F/121K
1.0
UNR1219
1.5
UNR1218/121L
2.0
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UNR1211
35
UNR1212/121E
60
UNR1213/1214
h
FE
V
CE
= 10V, I
C
= 5mA
80
UNR1215*/1216*/1217*/1210*
160
460
UNR121F/121D/1219
30
UNR1218/121K/121L
20
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
4.9
V
Output voltage low level
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
0.2
UNR1213/121K
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
0.2
V
UNR121D
V
CC
= 5V, V
B
= 10V, R
L
= 1k
0.2
UNR121E
V
CC
= 5V, V
B
= 6V, R
L
= 1k
0.2
Transition frequency
f
T
V
CB
= 10V, I
E
= 2mA, f = 200MHz
80
MHz
UNR1211/1214/1215/121K
10
UNR1212/1217
22
UNR1213/121D/121E/1210
R
1
(30%)
47
(+30%)
k
UNR1216/121F/121L
4.7
UNR1218
0.51
UNR1219
1
UNR1211/1212/1213/121L
0.8
1.0
1.2
UNR1214
0.17
0.21
0.25
UNR1218/1219
0.08
0.1
0.12
UNR121D
R
1
/R
2
4.7
UNR121E
2.14
UNR121F
0.47
UNR121K
2.13
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
* h
FE
rank classification (UNR1215/1216/1217/1210)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
3
Transistors with built-in Resistor
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
Common characteristics chart
P
T
-- Ta
Characteristics charts of UNR1211
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
100
200
300
400
500
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
4
Transistors with built-in Resistor
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
Characteristics charts of UNR1212
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR1213
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.9mA
0.8mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
5
Transistors with built-in Resistor
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR1214
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector to emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
6
Transistors with built-in Resistor
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
Characteristics charts of UNR1215
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR1216
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
I
B
=1.0mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
7
Transistors with built-in Resistor
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR1217
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
12
2
10
4
8
6
0
120
100
80
60
40
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
8
Transistors with built-in Resistor
Characteristics charts of UNR1218
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR1219
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
9
Transistors with built-in Resistor
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR1210
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
12
2
10
4
8
6
0
60
50
40
30
20
10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
350
250
150
50
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
10
Transistors with built-in Resistor
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
Characteristics charts of UNR121D
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR121E
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
12
2
10
4
8
6
0
30
25
20
15
10
5
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
1.5
10
30
100
300
1000
3000
10000
4.0
3.5
3.0
2.5
2.0
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0
12
2
10
4
8
6
0
60
50
40
30
20
10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
11
Transistors with built-in Resistor
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR121F
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
1.5
10
30
100
300
1000
3000
10000
4.0
3.5
3.0
2.5
2.0
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
12
Transistors with built-in Resistor
Characteristics charts of UNR121K
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
V
IN
-- I
O
Characteristics charts of UNR121L
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.2mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
0.01
1
3
0.1
1
10
100
10
30
100
300
1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
240
200
160
120
80
40
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
1
6
5
4
3
2
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
0.01
0.1
0.3
0.1
1
10
0.03
0.3
3
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.2mA
0.4mA
0.6mA
0.8mA
0.01
1
3
0.1
1
10
100
10
30
100
300
1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
240
200
160
120
80
40
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
13
Transistors with built-in Resistor
C
ob
-- V
CB
I
O
-- V
IN
0
1
6
5
4
3
2
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
UNR1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
0.01
0.1
0.3
0.1
1
10
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
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(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
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Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
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2002 JUL
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