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Электронный компонент: UNR1219

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Transistors with built-in Resistor
1
Publication date: October 2003
SJH00003BED
UNR121x Series
(UN121x Series)
Silicon NPN epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board
Resistance by Part Number
(R
1
)
(R
2
)
UNR1210 (UN1210)
47 k
UNR1211 (UN1211)
10 k
10 k
UNR1212 (UN1212)
22 k
22 k
UNR1213 (UN1213)
47 k
47 k
UNR1214 (UN1214)
10 k
47 k
UNR1215 (UN1215)
10 k
UNR1216 (UN1216)
4.7 k
UNR1217 (UN1217)
22 k
UNR1218 (UN1218)
0.51 k
5.1 k
UNR1219 (UN1219)
1 k
10 k
UNR121D (UN121D)
47 k
10 k
UNR121E (UN121E)
47 k
22 k
UNR121F (UN121F)
4.7 k
10 k
UNR121K (UN121K)
10 k
4.7 k
UNR121L (UN121L)
4.7 k
4.7 k
Absolute Maximum Ratings T
a
= 25C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) The part numbers in the parenthesis show conventional part number.
6.9
0.1
2.5
0.1
(1.0)
(1.0)
(1.5)
(0.85)
0.45
0.05
0.55
0.1
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(0.4)
3.5
0.1
4.5
0.1
4.1
0.2
2.4
0.2
1.25
0.05
2.0
0.2
1.0
0.1
(1.5)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
400
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
2
UNR121x Series
SJH00003BED
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 50 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 50 V, I
B
= 0
0.5
A
Emitter-base
UNR1211
I
EBO
V
EB
= 6 V, I
C
= 0
0.5
mA
cutoff current UNR1212/1214/121D/121E
0.2
(Collector open) UNR1213
0.1
UNR1210/1215/1216/1217
0.01
UNR121F/121K
1.0
UNR1219
1.5
UNR1218/121L
2.0
Forward current UNR1211
h
FE
V
CE
= 10 V, I
C
= 5 mA
35
transfer ratio
UNR1212/121E
60
UNR1213/1214
80
UNR1210
*
/1215
*
/1216
*
/
160
460
1217
*
UNR1219/121D/121F
30
UNR1218/121K/121L
20
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 0.3 mA
0.25
V
Output voltage high-level
V
OH
V
CC
= 5 V, V
B
= 0.5 V, R
L
= 1 k
4.9
V
Output voltage low-level
V
OL
V
CC
= 5 V, V
B
= 2.5 V, R
L
= 1 k
0.2
V
UNR1213/121K
V
CC
= 5 V, V
B
= 3.5 V, R
L
= 1 k
UNR121D
V
CC
= 5 V, V
B
= 10 V, R
L
= 1 k
UNR121E
V
CC
= 5 V, V
B
= 6 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= 10 V, I
E
= -2 mA, f = 200 MHz
80
MHz
Input resistance UNR1211/1214/1215/121K
R
1
-30%
10
+30%
k
UNR1212/1217
22
UNR1210/1213/121D/121E
47
UNR1216/121F/121L
4.7
UNR1218
0.51
UNR1219
1
Resistance ratio UNR1211/1212/1213/121L
R
1
/R
2
0.8
1.0
1.2
UNR1214
0.17
0.21
0.25
UNR1218/1219
0.08
0.1
0.12
UNR121D
4.7
UNR121E
2.14
UNR121F
0.47
UNR121K
2.13
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification (UNR1110/1115/1116/1117)
3
UNR121x Series
SJH00003BED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
P
T
T
a
Common characteristics chart
Characteristics charts of UNR1210
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
100
200
300
400
500
0
40
80
120
160
Ambient temperature T
a
(
C)
Total power dissipation P
T
(mW)
0
12
2
10
4
8
6
0
60
50
40
30
20
10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0.01
0.1
0.1
1
10
100
1
10
100
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
100
1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
0.1
6
5
4
3
2
1
1
10
100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
4
UNR121x Series
SJH00003BED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR1211
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR1212
0
0
12
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0.01
0.1
0.1
1
10
100
1
10
100
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0
1
100
200
300
400
10
100
1 000
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
0.1
6
5
4
3
2
1
1
10
100
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
0
0
12
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.9 mA
0.8 mA
0.01
0.1
0.1
1
10
100
1
10
100
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
100
1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
5
UNR121x Series
SJH00003BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR1213
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
0.1
6
5
4
3
2
1
1
10
100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
0
0
12
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0.01
0.1
0.1
1
10
100
1
10
100
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
100
1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
0.1
6
5
4
3
2
1
1
10
100
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C