Transistors with built-in Resistor
1
Publication date: December 2003
SJH00010CED
UNR221x Series
(UN221x Series)
Silicon NPN epitaxial planar transistor
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
Resistance by Part Number
Marking Symbol (R
1
)
(R
2
)
UNR2210 (UN2210)
8L
47 k
UNR2211 (UN2211)
8A
10 k
10 k
UNR2212 (UN2212)
8B
22 k
22 k
UNR2213 (UN2213)
8C
47 k
47 k
UNR2214 (UN2214)
8D
10 k
47 k
UNR2215 (UN2215)
8E
10 k
UNR2216 (UN2216)
8F
4.7 k
UNR2217 (UN2217)
8H
22 k
UNR2218 (UN2218)
8I
0.51 k
5.1 k
UNR2219 (UN2219)
8K
1 k
10 k
UNR221D (UN221D)
8M
47 k
10 k
UNR221E (UN221E)
8N
47 k
22 k
UNR221F (UN221F)
8O
4.7 k
10 k
UNR221K (UN221K)
8P
10 k
4.7 k
UNR221L (UN221L)
8Q
4.7 k
4.7 k
UNR221M (UN221M)
EL
2.2 k
47 k
UNR221N (UN221N)
EX
4.7 k
47 k
UNR221T (UN221T)
EZ
22 k
47 k
UNR221V (UN221V)
FD
2.2 k
2.2 k
UNR221Z (UN221Z)
FF
4.7 k
22 k
Absolute Maximum Ratings T
a
= 25C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
0.05
(0.65)
1.50
+0.25 0.05
2.8
+0.2 0.3
2
1
3
(0.95) (0.95)
1.9
0.1
2.90
+0.20
0.05
0.16
+0.10
0.06
0.4
0.2
5
10
0 to 0.1
1.1
+0.2 0.1
1.1
+0.3 0.1
Note) The part numbers in the parenthesis show conventional part number.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
UNR221x Series
2
SJH00010CED
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 50 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 50 V, I
B
= 0
0.5
A
Emitter-base
UNR2210/2215/2216/2217
I
EBO
V
EB
= -6 V, I
C
= 0
0.01
mA
cutoff current UNR2213
0.1
(Collector open) UNR2212/2214/221D/
0.2
221E/221M/221N/221T
UNR221Z
0.4
UNR2211
0.5
UNR221F/221K
1.0
UNR2219
1.5
UNR2218/221L/221V
2.0
Forward current
UNR221V
h
FE
V
CE
= 10 V, I
C
= 5 mA
6
20
transfer ratio
UNR2218/221K/221L
20
UNR2219/221D/221F
30
UNR2211
35
UNR2212/221E
60
UNR221Z
60
200
UNR2213/2214/221M
80
UNR221N/221T
80
400
UNR2210
*
/2215
*
/2216
*
/2217
*
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 0.3 mA
0.25
V
UNR221V
I
C
= 10 mA, I
B
= 1.5 mA
Output voltage high-level
V
OH
V
CC
= 5 V, V
B
= 0.5 V, R
L
= 1 k
4.9
V
Output voltage low-level
V
OL
V
CC
= 5 V, V
B
= 2.5 V, R
L
= 1 k
0.2
V
UNR2213/221K
V
CC
= 5 V, V
B
= 3.5 V, R
L
= 1 k
UNR221D
V
CC
= 5 V, V
B
= 10 V, R
L
= 1 k
UNR221E
V
CC
= 5 V, V
B
= 6 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= 10 V, I
E
= -2 mA, f = 200 MHz
150
MHz
Input resistance
UNR2218
R
1
-30%
0.51
+30%
k
UNR2219
1.0
UNR221M/211V
2.2
UNR2216/221F/221L/
4.7
221N/221Z
UNR2211/2214/2215/221K
10
UNR2212/2217/221T
22
UNR2210/2213/221D/221E
47
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
UNR221x Series
3
SJH00010CED
Electrical Characteristics (continued) T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance ratio UNR221M
R
1
/R
2
0.047
UNR221N
0.1
UNR2218/2219
0.08
0.10
0.12
UNR221Z
0.21
UNR2214
0.17
0.21
0.25
UNR221T
0.47
UNR221F
0.37
0.47
0.57
UNR221V
1.0
UNR2211/2212/2213/221L
0.8
1.0
1.2
UNR221K
1.70
2.13
2.60
UNR221E
1.70
2.14
2.60
UNR221D
3.7
4.7
5.7
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Common characteristics chart
P
T
T
a
Characteristics charts of UNR2210
0
50
100
150
200
250
0
40
80
120
160
Ambient temperature T
a
(
C)
Total power dissipation P
T
(mW
)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0
12
2
10
4
8
6
0
60
50
40
30
20
10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0.01
0.1
0.1
1
10
100
1
10
100
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
100
1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
UNR221x Series
4
SJH00010CED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR2211
0
0.1
6
5
4
3
2
1
1
10
100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
0
0
12
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0.01
0.1
0.1
1
10
100
1
10
100
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0
1
100
200
300
400
10
100
1 000
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
0.1
6
5
4
3
2
1
1
10
100
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
UNR221x Series
5
SJH00010CED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR2212
Characteristics charts of UNR2213
0
0
12
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.9 mA
0.8 mA
0.01
0.1
0.1
1
10
100
1
10
100
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
100
1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
0.1
6
5
4
3
2
1
1
10
100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
0
0
12
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0.01
0.1
0.1
1
10
100
1
10
100
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
100
1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
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