Transistors with built-in Resistor
1
Publication date: December 2003
SJH00018DED
UNR411x Series
(UN411x Series)
Silicon PNP epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
Resistance by Part Number
(R
1
)
(R
2
)
UNR4110 (UN4110)
47 k
UNR4111 (UN4111)
10 k
10 k
UNR4112 (UN4112)
22 k
22 k
UNR4113 (UN4113)
47 k
47 k
UNR4114 (UN4114)
10 k
47 k
UNR4115 (UN4115)
10 k
UNR4116 (UN4116)
4.7 k
UNR4117 (UN4117)
22 k
UNR4118 (UN4118)
0.51 k
5.1 k
UNR4119 (UN4119)
1 k
10 k
UNR411D (UN411D)
47 k
10 k
UNR411E (UN411E)
47 k
22 k
UNR411F (UN411F)
4.7 k
10 k
UNR411H (UN411H)
2.2 k
10 k
UNR411L (UN411L)
4.7 k
4.7 k
UNR411M
2.2 k
47 k
UNR411N
4.7 k
47 k
Absolute Maximum Ratings T
a
= 25C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
Note) The part numbers in the parenthesis show conventional part number.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-50
V
Collector-emitter voltage (Base open)
V
CEO
-50
V
Collector current
I
C
-100
mA
Total power dissipation
P
T
300
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
4.0
0.2
0.75 max.
2.0
0.2
0.45
(2.5) (2.5)
0.7
0.1
2
3
1
+0.20
0.10
0.45
+0.20
0.10
7.6
3.0
0.2
(0.8)
(0.8)
15.6
0.5
2
UNR411x Series
SJH00018DED
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -10 A, I
E
= 0
-50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -50 V, I
E
= 0
- 0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -50 V, I
B
= 0
- 0.5
A
Emitter-base
UNR4110/4115/4116/4117
I
EBO
V
EB
= -6 V, I
C
= 0
- 0.01
mA
cutoff current UNR4113
- 0.1
(Collector open) UNR4112/4114/411D/
- 0.2
411E/411M/411N
UNR4111
- 0.5
UNR411F/411H
-1.0
UNR4119
-1.5
UNR4118/411L
-2.0
Forward current UNR4118/411L
h
FE
V
CE
= -10 V, I
C
= -5 mA
20
transfer ratio
UNR4119/411D/411F/411H
30
UNR4111
35
UNR4112/411E
60
UNR4113/4114/411M
80
UNR411N
80
400
UNR4110
*
/4115
*
/4116
*
/
160
460
4117
*
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -10 mA, I
B
= - 0.3 mA
- 0.25
V
Output voltage high-level
V
OH
V
CC
= -5 V, V
B
= - 0.5 V, R
L
= 1 k
-4.9
V
Output voltage low-level
V
OL
V
CC
= -5 V, V
B
= -2.5 V, R
L
= 1 k
- 0.2
V
UNR4113
V
CC
= -5 V, V
B
= -3.5 V, R
L
= 1 k
UNR411D
V
CC
= -5 V, V
B
= -10 V, R
L
= 1 k
UNR411E
V
CC
= -5 V, V
B
= -6 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Input resistance UNR4118
R
1
-30%
0.51
+30%
k
UNR4119
1.0
UNR411H/411M
2.2
UNR4116/411F/411L/411N
4.7
UNR4111/4114/4115
10
UNR4112/4117
22
UNR4110/4113/411D/411E
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
3
UNR411x Series
SJH00018DED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
P
T
T
a
Common characteristics chart
Characteristics charts of UNR4110
0
0
-12
-2
-10
-4
-8
-6
-120
-100
-80
-60
-40
-20
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
-0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
0
160
40
120
80
100
300
200
400
Ambient temperature T
a
(
C)
Total power dissipation P
T
(mW)
Electrical Characteristics (continued) T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance ratio UNR411M
R
1
/R
2
0.047
UNR411N
0.1
UNR4118/4119
0.08
0.10
0.12
UNR4114
0.17
0.21
0.25
UNR411H
0.17
0.22
0.27
UNR411F
0.37
0.47
0.57
UNR4111/4112/4113/411L
0.8
1.0
1.2
UNR411E
1.70
2.14
2.60
UNR411D
3.7
4.7
5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
4
UNR411x Series
SJH00018DED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR4111
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
40
80
120
160
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
5
UNR411x Series
SJH00018DED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR4112
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR4113
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9mA
- 0.8mA
- 0.7mA
- 0.6mA
- 0.5mA
- 0.4mA
- 0.3mA
- 0.2mA
- 0.1mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75
C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75
C
25
C
-25C
0
- 0.1
6
5
4
3
2
1
-1
-10
-100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
- 0.4
-10
-10
2
-10
3
-10
4
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(A
)
Input voltage V
IN
(V)
V
O
=
-5 V
T
a
= 25
C
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
100
200
300
400
-10
-100
-1 000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
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