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Электронный компонент: UNR4114UN4114

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Transistors with built-in Resistor
1
Publication date: July 2002
SJH00018CED
UNR41XX Series
(UN41XX Series)
Silicon PNP epitaxial planar transistor
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
Resistance by Part Number
(R
1
)
(R
2
)
UNR4110 (UN4110)
47 k
UNR4111 (UN4111)
10 k
10 k
UNR4112 (UN4112)
22 k
22 k
UNR4113 (UN4113)
47 k
47 k
UNR4114 (UN4114)
10 k
47 k
UNR4115 (UN4115)
10 k
UNR4116 (UN4116)
4.7 k
UNR4117 (UN4117)
22 k
UNR4118 (UN4118)
0.51 k
5.1 k
UNR4119 (UN4119)
1 k
10 k
UNR411D (UN411D)
47 k
10 k
UNR411E (UN411E)
47 k
22 k
UNR411F (UN411F)
4.7 k
10 k
UNR411H (UN411H)
2.2 k
10 k
UNR411L (UN411L)
4.7 k
4.7 k
UNR411M
2.2 k
47 k
UNR411N
4.7 k
47 k
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
-50
V
Collector to emitter voltage
V
CEO
-50
V
Collector current
I
C
-100
mA
Total power dissipation
P
T
300
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
B
R
1
R
2
C
E
Internal Connection
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
4.0
0.2
0.75 max.
2.0
0.2
0.45
(2.5) (2.5)
0.7
0.1
2
3
1
+0.20
0.10
0.45
+0.20
0.10
7.6
3.0
0.2
(0.8)
(0.8)
15.6
0.5
Note) The part numbers in the parenthesis show conventional part number.
2
UNR41XX Series
SJH00018CED
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= -50 V, I
E
= 0
- 0.1
A
I
CEO
V
CE
= -50 V, I
B
= 0
- 0.5
Emitter
UNR4111
I
EBO
V
EB
= -6 V, I
C
= 0
- 0.5
mA
cutoff
UNR4112/4114/411D/
- 0.2
current
411E/411M/411N
UNR4113
- 0.1
UNR4110/4115/4116/4117
- 0.01
UNR411F/411H
-1.0
UNR4119
-1.5
UNR4118/411L
-2.0
Collector to base voltage
V
CBO
I
C
= -10 A, I
E
= 0
-50
V
Collector to emitter voltage
V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
DC
UNR4111
h
FE
V
CE
= -10 V, I
C
= -5 mA
35
current
UNR4112/411E
60
gain
UNR4113/4114/411M
80
UNR4110
*
/41115
*
/4116
*
/
160
460
4117
*
UNR4118/411L
20
UNR4119/411D/411F/411H
30
UNR411N
80
400
Collector to emitter saturation voltage
V
CE(sat)
I
C
= -10 mA, I
B
= - 0.3 mA
- 0.25
V
High level output voltage high level
V
OH
V
CC
= -5 V, V
B
= - 0.5 V, R
L
= 1 k
-4.9
V
Low level output voltage
V
OL
V
CC
= -5 V, V
B
= -2.5 V, R
L
= 1 k
- 0.2
V
UNR4113
V
CC
= -5 V, V
B
= -3.5 V, R
L
= 1 k
UNR411D
V
CC
= -5 V, V
B
= -10 V, R
L
= 1 k
UNR411E
V
CC
= -5 V, V
B
= -6 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= -10 V, I
E
= 2 mA, f = 200 MHz
80
MHz
Input
UNR4118
R
1
-30%
0.51
+30%
k
resistance UNR4119
1
UNR411H/411M
2.2
UNR4116/411F/411L/411N
4.7
UNR4111/4114/4115
10
UNR4112/4117
22
UNR4110/4113/411D/411E
47
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
Note) *: h
FE
rank classification (UNR4110/4115/4116/4117)
3
UNR41XX Series
SJH00018CED
Electrical Characteristics (continued) T
a
= 25C 3C
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
P
T
T
a
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance UNR4111/4112/4113/411L
R
1
/R
2
0.8
1.0
1.2
ratio
UNR4114
0.17
0.21
0.25
UNR4118/4119
0.08
0.1
0.12
UNR411D
3.7
4.7
5.7
UNR411E
1.7
2.14
2.6
UNR411F
0.37
0.47
0.57
UNR411H
0.17
0.22
0.27
UNR411M
0.047
UNR411N
0.1
Common characteristics chart
Characteristics charts of UNR4110
0
0
160
20
60
100
140
40
120
80
100
300
200
400
Ambient temperature T
a
(
C)
Total power dissipation P
T
(mW
)
0
0
-12
-2
-10
-4
-8
-6
-120
-100
-80
-60
-40
-20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.03
- 0.1 - 0.3
- 0.1
- 0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Collector to emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
-3
100
200
300
400
-10 -30 -100 -300 -1 000
DC current gain h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
4
UNR41XX Series
SJH00018CED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR4111
0
- 0.1 - 0.3
6
5
4
3
2
1
-1
-3
-10 -30 -100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
-3
- 0.4
-10
-30
-100
-300
-1 000
-3 000
-10 000
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.03
- 0.1 - 0.3
- 0.1
- 0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
-140
-100
-60
-20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.03
- 0.1 - 0.3
- 0.1
- 0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Collector to emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
-3
40
80
120
160
-10 -30 -100 -300 -1 000
DC current gain h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C
0
- 0.1 - 0.3
6
5
4
3
2
1
-1
-3
-10 -30 -100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
-3
- 0.4
-10
-30
-100
-300
-1 000
-3 000
10 000
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= -5 V
T
a
= 25C
- 0.01
- 0.03
- 0.1 - 0.3
- 0.1
- 0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25C
5
UNR41XX Series
SJH00018CED
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR4113
Characteristics charts of UNR4112
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
-140
-100
-60
-20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9mA
- 0.8mA
- 0.7mA
- 0.6mA
- 0.5mA
- 0.4mA
- 0.3mA
- 0.2mA
- 0.1mA
- 0.01
- 0.03
- 0.1 - 0.3
- 0.1
- 0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Collector to emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75
C
25
C
-25C
0
-1
-3
100
200
300
400
-10 -30 -100 -300 -1 000
DC current gain h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75
C
25
C
-25C
0
- 0.1 - 0.3
6
5
4
3
2
1
-1
-3
-10 -30 -100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
-1
-3
- 0.4
-10
-30
-100
-300
-1 000
-3 000
-10 000
-1.4
-1.2
-1.0
- 0.8
- 0.6
Output current I
O
(A
)
Input voltage V
IN
(V)
V
O
=
-5 V
T
a
= 25
C
- 0.01
- 0.03
- 0.1 - 0.3
- 0.1
- 0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= - 0.2 V
T
a
= 25
C
0
0
-12
-2
-10
-4
-8
-6
-40
-120
-80
-160
-140
-100
-60
-20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= -1.0 mA
- 0.9 mA
- 0.8 mA
- 0.7 mA
- 0.6 mA
- 0.5 mA
- 0.4 mA
- 0.3 mA
- 0.2 mA
- 0.1 mA
- 0.01
- 0.03
- 0.1 - 0.3
- 0.1
- 0.3
-1
-3
-10
-30
-100
-1
-3
-10 -30 -100
Collector to emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
-1
-3
100
200
300
400
-10 -30 -100 -300 -1 000
DC current gain h
FE
Collector current I
C
(mA)
V
CE
= -10 V
T
a
= 75C
25
C
-25C