1
Transistors with built-in Resistor
UNR4221/4222/4223/4224
(UN4221/4222/4223/4224)
Silicon NPN epitaxial planer transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
New S type package, allowing supply with the radial taping.
I
Resistance by Part Number
(R
1
)
(R
2
)
G
UNR4221
2.2k
2.2k
G
UNR4222
4.7k
4.7k
G
UNR4223
10k
10k
G
UNR4224
2.2k
10k
I
Absolute Maximum Ratings
(Ta=25C)
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
500
mA
Total power dissipation
P
T
300
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
B
C
R1
R2
E
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
1
A
I
CEO
V
CE
= 50V, I
B
= 0
1
A
UNR4221
5
UNR4222
I
EBO
V
EB
= 6V, I
C
= 0
2
mA
UNR4223/4224
1
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UNR4221
40
UNR4222
h
FE
V
CE
= 10V, I
C
= 100mA
50
UNR4223/4224
60
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 100mA, I
B
= 5mA
0.25
V
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 500
4.9
V
Output voltage low level
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 500
0.2
V
UNR4221/4224
2.2
UNR4222
R
1
(30%)
4.7
(+30%)
k
UNR4223
10
Resistance ratio
R
1
/R
2
0.8
1.0
1.2
UNR4224
0.17
0.22
0.27
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
1 : Emitter
2 : Collector
3 : Base
NS-B1 Package
Unit: mm
4.0
0.2
0.75 max.
2.0
0.2
0.45
(2.5) (2.5)
0.7
0.1
2
3
1
+0.20
0.10
0.45
+0.20
0.10
7.6
3.0
0.2
(0.8)
(0.8)
15.6
0.5
Note) The Part numbers in the Parenthesis show conventional part number.
2
Transistors with built-in Resistor
Common characteristics chart
P
T
-- Ta
Characteristics charts of UNR4221
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
UNR4221/4222/4223/4224
0
0
12
2
10
4
8
6
300
250
200
150
100
50
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.2mA
0.1mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100
300
1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
24
20
16
12
8
4
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
0
160
20
60
100
140
40
120
80
100
300
200
400
350
250
150
50
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
3
Transistors with built-in Resistor
UNR4221/4222/4223/4224
Characteristics charts of UNR4222
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR4223
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
300
250
200
150
100
50
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.2mA
0.1mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100
300
1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
50
100
150
200
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
12
10
8
6
4
2
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.2mA
0.1mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100
300
1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
50
100
150
200
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
4
Transistors with built-in Resistor
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR4224
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0.1
0.3
12
10
8
6
4
2
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
0
0
12
2
10
4
8
6
300
250
200
150
100
50
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.2mA
0.1mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100
300
1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
50
100
150
200
10
30
100
300
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
0
0.1
0.3
12
10
8
6
4
2
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
=5V
Ta=25C
0.1
0.3
0.1
0.3
1
3
10
30
100
300
1000
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=0.2V
Ta=25C
UNR4221/4222/4223/4224
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
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there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
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Consult our sales staff in advance for information on the following applications:
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(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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2001 MAR
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