1
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
(UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/511D/511E/511F/
511H/511L/511M/511N/511T/511V/511Z)
Silicon PNP epitaxial planer transistor
For digital circuits
I
Features
G
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
G
S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
I
Resistance by Part Number
Marking Symbol
(R
1
)
(R
2
)
G
UNR5111
6A
10k
10k
G
UNR5112
6B
22k
22k
G
UNR5113
6C
47k
47k
G
UNR5114
6D
10k
47k
G
UNR5115
6E
10k
--
G
UNR5116
6F
4.7k
--
G
UNR5117
6H
22k
--
G
UNR5118
6I
0.51
5.1k
G
UNR5119
6K
1k
10k
G
UNR5110
6L
47k
--
G
UNR511D
6M
47k
10k
G
UNR511E
6N
47k
22k
G
UNR511F
6O
4.7k
10k
G
UNR511H
6P
2.2k
10k
G
UNR511L
6Q
4.7k
4.7k
G
UNR511M
EI
2.2k
47k
G
UNR511N
EW
4.7k
47k
G
UNR511T
EY
22k
47k
G
UNR511V
FC
2.2k
2.2k
G
UNR511Z
FE
4.7k
22k
I
Absolute Maximum Ratings
(Ta=25C)
1 : Base
2 : Emitter
EIAJ : SC70
3 : Collector
SMini3-G1 Package
Unit: mm
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
2.1
0.1
1.3
0.1
0.3
+0.1
0.0
2.0
0.2
1.25
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
0.1
0.9
0.1
0 to 0.1
0.9
+0.2 0.1
0.15
+0.10
0.05
5
10
B
C
R1
R2
E
Note) The Part numbers in the Parenthesis show conventional part number.
2
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
A
UNR5111
0.5
UNR5112/5114/511E/511D/511M/511N/511T
0.2
UNR5113
0.1
UNR5115/5116/5117/5110
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
UNR511F/511H
1.0
UNR5119
1.5
UNR5118/511L/511V
2.0
UNR511Z
0.4
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
50
V
UNR511N/511T/511V/511Z
50
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
UNR511N/511T
50
UNR5111
35
UNR5112/511E
60
UNR5113/5114/511M
80
UNR5115*/5116*/5117*/5110*
160
460
UNR511F/511D/5119/511H
h
FE
V
CE
= 10V, I
C
= 5mA
30
UNR5118/511L
20
UNR511N/511T
80
400
UNR511V
6
20
UN
R511Z 0 200
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
UNR511V
I
C
= 10mA, I
B
= 1.5mA
0.25
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
4.9
V
Output voltage low level
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
0.2
UNR5113
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
0.2
V
UNR511D
V
CC
= 5V, V
B
= 10V, R
L
= 1k
0.2
UNR511E
V
CC
= 5V, V
B
= 6V, R
L
= 1k
0.2
Transition frequency
f
T
V
CB
= 10V, I
E
= 1mA, f = 200MHz
80
MHz
UNR511Z
V
CB
= 10V, I
E
= 1mA, f = 200MHz
150
UNR5111/5114/5115
10
UNR5112/5117/511T
22
UNR5113/5110/511D/511E
47
UNR5116/511F/511L/511N/511Z
R
1
(30%)
4.7
(+30%)
k
UNR5118
0.51
UNR5119
1
UNR511H/511M/511V
2.2
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
* h
FE
rank classification (UNR5115/5116/5117/5110)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
3
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
I
Electrical Characteristics (continued)
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
UNR5111/5112/5113/511L
0.8
1.0
1.2
UNR5114
0.17
0.21
0.25
UNR5118/5119
0.08
0.1
0.12
UNR511D
4.7
UNR511E
2.14
UNR511F/511T
R
1
/R
2
0.47
UNR511H
0.17
0.22
0.27
UNR511M
0.047
UNR511N
0.1
UNR511V
1.0
UNR511Z
0.21
Resis-
tance
ratio
4
Transistors with built-in Resistor
Common characteristics chart
P
T
-- Ta
Characteristics charts of UNR5111
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
160
40
120
80
240
200
160
120
80
40
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
5
Transistors with built-in Resistor
Characteristics charts of UNR5112
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR5113
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
6
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR5114
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.1
0.3
0.1 0.3
1
3
10
30
100
300
1000
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
7
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR5115
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR5116
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
8
Transistors with built-in Resistor
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR5117
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
120
100
80
60
40
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
9
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR5118
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR5119
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.4mA
0.3mA
0.2mA
0.1mA
0.5mA
0.6mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.4mA
0.3mA
0.6mA
0.9mA
0.8mA
0.7mA
0.5mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
10
Transistors with built-in Resistor
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR5110
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
120
100
80
60
40
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
11
Transistors with built-in Resistor
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UNR511D
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR511E
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
60
50
40
30
20
10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
1.5
10
30
100
300
1000
3000
10000
4.0
3.5
3.0
2.5
2.0
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
60
50
40
30
20
10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA 0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
=10V
Ta=75C
25C
25C
12
Transistors with built-in Resistor
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR511F
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
1.5
10
30
100
300
1000
3000
10000
4.0
3.5
3.0
2.5
2.0
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
40
80
120
160
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
13
Transistors with built-in Resistor
Characteristics charts of UNR511H
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
V
IN
-- I
O
Characteristics charts of UNR511L
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
120
100
80
60
40
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 0.5mA
0.3mA
0.4mA
0.2mA
0.1mA
0.01
1
3
0.1
1
10
100
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
0.1 0.3
240
200
160
120
80
40
1
3
10
30
100
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
1
6
5
4
3
2
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
0.01
0.1 0.3
0.1
1
10
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.2mA
0.4mA
0.6mA
0.8mA
0.01
0.03
1
3
0.1
0.3
1
3
10
30
100
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
240
200
160
120
80
40
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
14
Transistors with built-in Resistor
C
ob
-- V
CB
V
IN
-- I
O
Characteristics charts of UNR511M
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
1
6
5
4
3
2
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
0.01
0.1 0.3
0.1
1
10
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
240
200
160
120
80
40
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.2mA
0.1mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
0.001
0.003
1
3
0.01
0.03
0.1
0.3
1
3
10
10
30
100 300 1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
500
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
10
8
6
4
2
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
0.4
10
1
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
15
Transistors with built-in Resistor
Characteristics charts of UNR511N
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR511T
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
0
0
12
2
10
4
8
6
50
150
100
200
175
125
75
25
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.7mA
0.8mA
0.9mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
1
0.1
1
10
10
100
1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
300
250
200
150
100
50
10
100
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
1
6
5
4
3
2
1
10
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
0.4
10
100
1000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
50
150
100
200
175
125
75
25
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.7mA
0.8mA
0.9mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
1
0.1
1
10
10
100
1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
300
250
200
150
100
50
10
100
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
16
Transistors with built-in Resistor
I
O
-- V
IN
V
IN
-- I
O
Characteristics charts of UNR511V
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
I
O
-- V
IN
V
IN
-- I
O
1
0.4
10
100
1000
10000
1.4
1.2
1
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
12
10
8
6
4
2
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.7mA
0.8mA
0.9mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
1
0.1
1
10
10
100
1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
12
10
8
6
4
2
10
100
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
1
0.4
10
100
1000
10000
1.4
1.2
1
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
17
Transistors with built-in Resistor
Characteristics charts of UNR511Z
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
0
1
6
5
4
3
2
1
10
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
0.4
10
100
1000
10000
1.4
1.2
1
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.01
0.1
0.1
1
10
100
1
10
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
0
0
12
2
10
4
8
6
50
150
100
200
175
125
75
25
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.7mA
0.8mA
0.9mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
1
0.1
1
10
10
100
1000
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
300
250
200
150
100
50
10
100
1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
UNR5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
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there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap-
pear in this material.
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
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Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
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from our company.
2001 MAR
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