Transistors with built-in Resistor
1
Publication date: January 2004
SJH00024CED
UNR521x Series
(UN521x Series)
Silicon NPN epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
Resistance by Part Number
Marking symbol (R
1
)
(R
2
)
UNR5210 (UN5210)
8L
47 k
UNR5211 (UN5211)
8A
10 k
10 k
UNR5212 (UN5212)
8B
22 k
22 k
UNR5213 (UN5213)
8C
47 k
47 k
UNR5214 (UN5214)
8D
10 k
47 k
UNR5215 (UN5215)
8E
10 k
UNR5216 (UN5216)
8F
4.7 k
UNR5217 (UN5117)
8H
22 k
UNR5218 (UN5218)
8I
0.51 k
5.1 k
UNR5219 (UN5219)
8K
1 k
10 k
UNR521D (UN521D)
8M
47 k
10 k
UNR521E (UN521E)
8N
47 k
22 k
UNR521F (UN521F)
8O
4.7 k
10 k
UNR521K (UN521K)
8P
10 k
4.7 k
UNR521L (UN521L)
8Q
4.7 k
4.7 k
UNR521M (UN521M)
EL
2.2 k
47 k
UNR521N (UN521N)
EX
4.7 k
47 k
UNR521T (UN521T)
EZ
22 k
47 k
UNR521V (UN521V)
FD
2.2 k
2.2 k
UNR521Z (UN521Z)
FF
4.7 k
22 k
Absolute Maximum Ratings T
a
= 25C
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
B
R
1
R
2
C
E
2.1
0.1
1.3
0.1
0.3
+0.1
0.0
2.0
0.2
1.25
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
0.1
0.9
0.1
0 to 0.1
0.9
+0.2 0.1
0.15
+0.10
0.05
5
10
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
UNR521x Series
2
SJH00024CED
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 50 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 50 V, I
B
= 0
0.5
Emitter-base UNR5210/5215/5216/5217
I
EBO
V
EB
= 6 V, I
C
= 0
0.01
mA
cutoff current UNR5213
0.1
(Collector
UNR5212/5214/521D/
0.2
open)
521E/521M/521N/521T
UNR521Z
0.4
UNR5211
0.5
UNR521F/521K
1.0
UNR5219
1.5
UNR5218/521L/521V
2.0
Forward
UNR521V
h
FE
V
CE
= 10 V, I
C
= 5 mA
6
20
current
UNR5218/521K/521L
20
transfer
UNR5219/521D/521F
30
ratio
UNR5211
35
UNR5212/521E
60
UNR521Z
60
200
UNR5213/5214/521M
80
UNR521N/521T
80
400
UNR5210
*
/5215
*
/5216
*
/5217
*
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 0.3 mA
0.25
V
UNR521V
I
C
= 10 mA, I
B
= 1.5 mA
Output voltage high-level
V
OH
V
CC
= 5 V, V
B
= 0.5 V, R
L
= 1 k
4.9
V
Output voltage low-level
V
OL
V
CC
= 5 V, V
B
= 2.5 V, R
L
= 1 k
0.2
V
UNR5213/521K
V
CC
= 5 V, V
B
= 3.5 V, R
L
= 1 k
UNR521D
V
CC
= 5 V, V
B
= 10 V, R
L
= 1 k
UNR521E
V
CC
= 5 V, V
B
= 6.0 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= 10 V, I
E
= -2 mA, f = 200 MHz
150
MHz
Input
UNR5218
R
1
-30%
0.51
+30%
k
resistance UNR5219
1.0
UNR521M/521V
2.2
UNR5216/521F/521L/521N
4.7
UNR521Z
UNR5211/5214/5215/521K
10
UNR5212/5217/521T
22
UNR5210/5213/521D/521E
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
UNR521x Series
3
SJH00024CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance UNR521M
R
1
/R
2
0.047
ratio
UNR521N
0.1
UNR5218/5219
0.08
0.10
0.12
UNR521Z
0.21
UNR5214
0.17
0.21
0.25
UNR521T
0.47
UNR521F
0.37
0.47
0.57
UNR521V
1.0
UNR5211/5212/5213/521L
0.8
1.0
1.2
UNR521K
1.70
2.13
2.60
UNR521E
1.70
2.14
2.60
UNR521D
3.7
4.7
5.7
Electrical Characteristics (continued) T
a
= 25C 3C
Characteristics charts of UNR5210
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Common characteristics chart
P
T
T
a
0
12
2
10
4
8
6
0
60
50
40
30
20
10
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
10
2
10
3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
0
160
40
120
80
240
200
160
120
80
40
Ambient temperature T
a
(
C)
Total power dissipation P
T
(mW
)
UNR521x Series
4
SJH00024CED
Characteristics charts of UNR5211
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
10
-
1
6
5
4
3
2
1
1
10
10
2
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
0
0
12
2
10
4
8
6
40
120
80
160
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
10
2
10
3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
10
-
1
6
5
4
3
2
1
10
10
2
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
UNR521x Series
5
SJH00024CED
Characteristics charts of UNR5212
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR5213
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
0
12
2
10
4
8
6
40
120
80
160
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.9 mA
0.8 mA
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
10
2
10
3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
10
-
1
6
5
4
3
2
1
1
10
10
2
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Input voltage V
IN
(V)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
0
0
12
2
10
4
8
6
40
120
80
160
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
10
-
2
10
-
1
10
-
1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
10
2
10
3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
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