Transistors with built-in Resistor
1
Publication date: January 2004
SJH00039BED
UNR921xJ Series
(UN921xJ Series)
Silicon NPN epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape
packing.
Resistance by Part Number
Marking Symbol (R
1
)
(R
2
)
UNR9210J (UN9210J)
8L
47 k
UNR9211J (UN9211J)
8A
10 k
10 k
UNR9212J (UN9212J)
8B
22 k
22 k
UNR9213J (UN9213J)
8C
47 k
47 k
UNR9214J (UN9214J)
8D
10 k
47 k
UNR9215J (UN9215J)
8E
10 k
UNR9216J (UN9216J)
8F
4.7 k
UNR9217J (UN9217J)
8H
22 k
UNR9218J (UN9218J)
8I
0.51 k
5.1 k
UNR9219J (UN9219J)
8K
1 k
10 k
UNR921AJ
8X
100 k
100 k
UNR921BJ
8Y
100 k
UNR921CJ
8Z
47 k
UNR921DJ (UN921DJ) 8M
47 k
10 k
UNR921EJ (UN921EJ)
8N
47 k
22 k
UNR921FJ (UN921FJ)
8O
4.7 k
10 k
UNR921KJ (UN921KJ) 8P
10 k
4.7 k
UNR921LJ (UN921LJ)
8Q
4.7 k
4.7 k
UNR921MJ
EL
2.2 k
47 k
UNR921NJ
EX
4.7 k
47 k
UNR921TJ (UN921TJ)
EZ
22 k
47 k
UNR921VJ
FD
2.2 k
2.2 k
Absolute Maximum Ratings T
a
= 25C
Note) The part numbers in the parenthesis show conventional part number.
0.27
0.02
3
1
2
0.12
+0.03
0.01
0.80
0.05
(0.80)
0.85
1.60
0.05
0 to 0.02
0.10 max.
0.70
+0.05 0.03
(0.375)
5
5
1.60
+0.05
0.03
1.00
0.05
(0.50)(0.50)
+0.05 0.03
B
C
E
R
1
R
2
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
125
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
2
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Collector-base cut-off current (Emitter open)
I
CBO
V
CB
= 50 V, I
E
= 0
0.1
A
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
= 50 V, I
B
= 0
0.5
A
Emitter-
UNR9210J/9215J/
I
EBO
V
EB
= 6 V, I
C
= 0
0.01
mA
base
9216J/9217J/921BJ
cut-off
UNR9213J/921AJ
0.1
current
UNR9212J/9214J/921DJ/
0.2
(Collector 921EJ/921MJ/921NJ/921TJ
open)
UNR9211J
0.5
UNR921FJ/921KJ
1.0
UNR9219J
1.5
UNR9218J/921CJ/921LJ/921VJ
2.0
Forward
UNR921VJ
h
FE
V
CE
= 10 V, I
C
= 5 mA
6
20
current
UNR9218J/921KJ/921LJ
20
transfer
UNR9219J/921DJ/921FJ
30
ratio
UNR9211J
35
UNR9212J/921EJ
60
UNR9213J/9214J/921AJ/
80
921CJ/921MJ
UNR921NJ/921TJ
80
400
UNR9210J/9215J/9216J/
160
460
9217J/921BJ
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA, I
B
= 0.3 mA
0.25
V
Output voltage high-level
V
OH
V
CC
= 5 V, V
B
= 0.5 V, R
L
= 1 k
4.9
V
Output voltage low-level
V
OL
V
CC
= 5 V, V
B
= 2.5 V, R
L
= 1 k
0.2
V
UNR9213J/921BJ/921KJ
V
CC
= 5 V, V
B
= 3.5 V, R
L
= 1 k
UNR921DJ
V
CC
= 5 V, V
B
= 10 V, R
L
= 1 k
UNR921EJ
V
CC
= 5 V, V
B
= 6 V, R
L
= 1 k
UNR921AJ
V
CC
= 5 V, V
B
= 5 V, R
L
= 1 k
Transition frequency
f
T
V
CB
= 10 V, I
E
= -2 mA, f = 200 MHz
150
MHz
Input
UNR9218J
R
1
-30%
0.51
+30%
k
resistance UNR9219J
1
UNR921MJ/921VJ
2.2
UNR9216J/921FJ/921LJ/921NJ
4.7
UNR9211J/9214J/9215J/921KJ
10
UNR9212J/9217J/921TJ
22
UNR9210J/9213J/921DJ/921EJ
47
UNR921AJ/921BJ
100
3
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Electrical Characteristics (continued) T
a
= 25C 3C
Characteristics charts of UNR9210J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Common characteristics chart
P
T
T
a
0
0
160
40
120
80
150
125
100
75
50
25
Ambient temperature T
a
(
C)
Total power dissipation P
T
(mW
)
0
12
2
10
4
8
6
0
60
50
40
30
20
10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
1
100
200
300
400
10
10
2
10
3
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Emitter-base resistance UNR921CJ
R
2
-30%
47
+30%
k
Rasistance UNR921MJ
R
1
/R
2
0.047
ratio
UNR921NJ
0.1
UNR9218J/9219J
0.08
0.10
0.12
UNR9214J
0.17
0.21
0.25
UNR921TJ
0.47
UNR921FJ
0.37
0.47
0.57
UNR921AJ/921VJ
1.0
UNR9211J/9212J/9213J/921LJ
0.8
1.0
1.2
UNR921KJ
1.70
2.13
2.60
UNR921EJ
1.70
2.14
2.60
UNR921DJ
3.7
4.7
5.7
4
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
Characteristics charts of UNR9211J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
10
-1
6
5
4
3
2
1
1
10
10
2
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
0
0
12
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
10
2
10
3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
10
-1
6
5
4
3
2
1
1
10
10
2
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
5
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Characteristics charts of UNR9212J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR9213J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
0
12
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.9 mA
0.8 mA
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
10
2
10
3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10 V
T
a
= 75C
25
C
-25C
0
10
-1
6
5
4
3
2
1
1
10
10
2
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
f
= 1 MHz
I
E
= 0
T
a
= 25C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5 V
T
a
= 25C
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2 V
T
a
= 25C
0
0
12
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
0
1
100
200
300
400
10
10
2
10
3
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
6
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR9214J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
10
-1
6
5
4
3
2
1
1
10
10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
V
O
= 5 V
T
a
= 25C
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
0
0
12
2
10
4
8
6
40
120
80
160
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-1
10
-1
10
-2
1
10
10
2
1
10
10
2
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
1
100
200
300
400
10
10
2
10
3
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
10
-1
6
5
4
3
2
1
1
10
10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
V
O
= 5 V
T
a
= 25C
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
7
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Characteristics charts of UNR9215J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR9216J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
0
12
2
10
4
8
6
40
120
80
160
T
a
= 25C
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
I
B
= 1.0 mA
0.8 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
I
C
/ I
B
= 10
T
a
= 75
C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
1
100
200
300
400
10
10
2
10
3
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
10
-1
6
5
4
3
2
1
1
10
10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
V
O
= 5 V
T
a
= 25C
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
0
0
12
2
10
4
8
6
40
120
80
160
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
1
100
200
300
400
10
10
2
10
3
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
8
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR9217J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
10
-1
6
5
4
3
2
1
1
10
10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
V
O
= 5 V
T
a
= 25C
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
0
12
2
10
4
8
6
0
120
100
80
60
40
20
T
a
= 25C
I
B
=1 .0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
1
100
200
300
400
10
10
2
10
3
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
10
-1
6
5
4
3
2
1
1
10
10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
V
O
= 5 V
T
a
= 25C
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
- -1
10
-1
1
10
10
2
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
9
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Characteristics charts of UNR9218J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR9219J
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
240
200
160
120
80
40
0
12
2
10
4
8
6
I
B
= 1.0 mA
T
a
= 25C
0.4 mA
0.3 mA
0.2 mA
0.1 mA
0.5 mA
0.6 mA
0.8 mA
0.7 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
I
C
/ I
B
= 10
25
C
-25C
T
a
= 75C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
40
80
120
160
1
10
10
2
10
3
V
CE
= 10 V
-25C
T
a
= 75C
25
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
6
5
4
3
2
1
10
-1
1
10
10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
0.4
1.4
1.2
1.0
0.8
0.6
V
O
= 5 V
T
a
= 25C
1
10
10
2
10
3
10
4
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
0
240
200
160
120
80
40
0
12
2
10
4
8
6
T
a
= 25C
0.4 mA
0.3 mA
0.2 mA
0.1 mA
0.5 mA
I
B
= 1.0 mA
0.6 mA
0.8 mA
0.7 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
I
C
/ I
B
= 10
25
C
-25C
T
a
= 75C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
40
80
120
160
1
10
10
2
10
3
V
CE
= 10 V
-25C
T
a
= 75C
25
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
10
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR921AJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
6
5
4
3
2
1
10
-1
1
10
10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
0.4
1.4
1.2
1.0
0.8
0.6
V
O
= 5 V
T
a
= 25C
1
10
10
2
10
3
10
4
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
T
a
= 25C
0
120
80
40
0
2
4
6
8
10
I
B
= 0.5 mA
0.3 mA
0.2 mA
0.1 mA
0.4 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-1
10
-2
1
10
-1
1
10
10
2
I
C
/ I
B
= 10
-25C
T
a
= 75C
25
C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
10
-1
1
10
10
2
10
3
V
CE
= 10 V
0
100
200
300
400
25
C
-25C
T
a
= 75C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
10
20
1
10
f
= 1 MHz
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
10
-2
10
-1
1
10
0
1
2
3
V
O
= 5 V
T
a
= 25C
Output current I
O
(mA
)
Input voltage V
IN
(V)
1
10
10
2
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
11
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Characteristics charts of UNR921BJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR921CJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
T
a
= 25C
0
120
20
40
60
80
100
0
2
4
6
8
10
I
B
= 0.5 mA
0.3 mA
0.2 mA
0.1 mA
0.4 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-
2
10
-
1
10
1
10
-
1
1
10
10
2
I
C
/ I
B
= 10
-25C
T
a
= 75C
25
C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
V
CE
= 10 V
0
100
200
300
400
1
10
10
2
10
3
25
C
-25C
T
a
= 75C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
1
10
10
20
30
40
f
= 1 MHz
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
0.4
0.8
1.2
1.6
V
O
= 5 V
T
a
= 25C
10
1
10
-1
Output current I
O
(mA
)
Input voltage V
IN
(V)
10
-1
10
2
10
-1
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
1
10
Input voltage V
IN
(V
)
Output current I
O
(mA)
T
a
= 25C
0
120
80
40
0
2
4
6
8
10
I
B
= 1.0 mA
0.3 mA
0.2 mA
0.1 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-1
10
-2
1
1
10
10
2
I
C
/ I
B
= 10
-25C
T
a
= 75C
25
C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
1
0
100
200
300
10
10
2
10
3
V
CE
= 10 V
25
C
-25C
T
a
= 75C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
12
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR921DJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
10
20
30
40
f
= 1 MHz
T
a
= 25C
1
10
10
2
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
10
-1
10
2
0
0.4
0.8
V
O
= 5 V
T
a
= 25C
1
10
Output current I
O
(mA
)
Input voltage V
IN
(V)
10
-1
1
10
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
T
a
= 25C
I
B
= 1.0 mA
0
12
2
10
4
8
6
0
30
25
20
15
10
5
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
I
C
/ I
B
= 10
25
C
-25C
T
a
= 75C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
40
80
120
160
1
10
10
2
10
3
V
CE
= 10 V
25
C
-25C
T
a
= 75C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
6
5
4
3
2
1
10
-1
1
10
10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
3.5
3.0
1.5
2.0
2.5
4.0
V
O
= 5 V
T
a
= 25C
1
10
10
2
10
3
10
4
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
13
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Characteristics charts of UNR921EJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR921FJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
0
12
2
10
4
8
6
0
60
50
40
30
20
10
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
1
40
80
120
160
10
10
2
10
3
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
10
-1
6
5
4
3
2
1
1
10
10
2
f
= 1MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
1
1.5
10
10
2
10
3
10
4
4.0
3.5
3.0
2.5
2.0
V
O
= 5 V
T
a
= 25C
Output current I
O
(
A
)
Input voltage V
IN
(V)
0
12
2
10
4
8
6
0
240
200
160
120
80
40
T
a
= 25C
I
B
= 1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
1
40
80
120
160
10
10
2
10
3
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
14
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
V
IN
I
O
Characteristics charts of UNR921KJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
10
-1
6
5
4
3
2
1
1
10
10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
V
O
= 5 V
T
a
= 25C
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
0
12
2
10
4
8
6
0
240
200
160
120
80
40
I
B
= 1.2 mA
0.2 mA
0.4 mA
0.6 mA
0.8 mA
1.0 mA
T
a
= 25C
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
1
10
10
2
1
10
10
2
10
3
I
C
/ I
B
= 10
-25C
T
a
= 75C
25
C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
240
200
160
120
80
40
1
10
10
2
10
3
V
CE
= 10 V
25
C
-25C
T
a
= 75C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
1
10
10
2
0
6
5
4
3
2
1
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
15
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Characteristics charts of UNR921LJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR921MJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
V
IN
I
O
0
12
2
10
4
8
6
0
240
200
160
120
80
40
I
B
= 1.0 mA
0.2 mA
0.4 mA
0.6 mA
0.8 mA
T
a
= 25C
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
1
10
10
2
I
C
/ I
B
= 10
-25C
T
a
= 75C
25
C
1
10
10
2
10
3
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
240
200
160
120
80
40
1
10
10
2
10
3
V
CE
= 10 V
25
C
-25C
T
a
= 75C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
1
10
10
2
0
6
5
4
3
2
1
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
0
0
12
2
10
4
8
6
240
200
160
120
80
40
T
a
= 25C
I
B
= 1.0 mA
0.2 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-3
1
10
-2
10
-1
1
10
10
10
2
10
3
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
1
100
200
300
500
400
10
10
2
10
3
V
CE
= 10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
16
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR921NJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
10
-1
5
4
3
2
1
1
10
10
2
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
V
O
= 5 V
T
a
= 25C
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
10
-1
1
10
10
2
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
0
12
2
10
4
8
6
0
40
120
80
160
I
B
= 1.0 mA
0.2 mA
0.4 mA
0.8 mA
0.7 mA
0.6 mA
T
a
= 25C
0.9 mA
0.5 mA
0.3 mA
0.1 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
1
10
1
10
10
2
10
3
I
C
/ I
B
= 10
25
C
-25C
T
a
= 75C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
480
400
320
240
160
80
1
10
10
2
10
3
V
CE
= 10 V
25
C
-25C
T
a
= 75C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
1
10
10
2
0
6
5
4
3
2
1
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
1
10
10
2
10
3
10
4
1.2
1.0
0.4
0.6
0.8
1.4
V
O
= 5 V
T
a
= 25C
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
17
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Characteristics charts of UNR921TJ
Characteristics charts of UNR921VJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
0
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0.8 mA
0.7 mA
0.6 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
I
B
= 1.0 mA
0.9 mA
T
a
= 25C
0.5 mA
10
10
2
10
1
10
2
10
3
25
C
-25C
T
a
= 75C
I
C
/ I
B
= 10
Collector-emitter saturation voltage V
CE(sat)
(mV
)
Collector current I
C
(mA)
0
10
-1
100
400
300
200
1
10
10
2
25
C
-25C
T
a
= 75C
V
CE
= 10 V
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0
1
4
3
2
1
10
10
2
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
10
-3
10
-1
10
-2
0.25
1
10
10
2
0.75
1.25
V
O
= 5 V
T
a
= 25C
Output current I
O
(mA
)
Input voltage V
IN
(V)
10
-1
1
10
10
2
10
-3
10
-2
10
-1
1
10
2
10
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
0
12
2
10
4
8
6
0
40
120
80
160
I
B
= 1.0 mA
0.2 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
T
a
= 25C
0.9 mA
0.3 mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA
)
10
-2
10
-1
1
10
1
10
10
2
10
3
I
C
/ I
B
= 10
25
C
-25C
T
a
= 75C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0
240
200
160
120
80
40
1
10
10
2
10
3
V
CE
= 10 V
-25C
T
a
= 75C
25
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
18
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
1
10
10
2
0
6
5
4
3
2
1
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF
)
Collector-base voltage V
CB
(V)
1
10
10
2
10
3
10
4
1.2
1.0
0.4
0.6
0.8
1.4
V
O
= 5 V
T
a
= 25C
Output current I
O
(
A
)
Input voltage V
IN
(V)
10
-2
10
-1
1
10
10
2
10
-1
1
10
10
2
V
O
= 0.2 V
T
a
= 25C
Input voltage V
IN
(V
)
Output current I
O
(mA)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
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tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
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Consult our sales staff in advance for information on the following applications:
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Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
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2003 SEP
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