1
Publication date: July 2002
SJJ00265AED
Composite Transistors
UP01878
Silicon N-channel MOSFET
For switching
Features
Two elements incorporated into one package
Reduction of the mounting area and assembly cost by one half
Basic Part Number of Element
2SK3539 2 elements
Absolute Maximum Ratings T
a
= 25C
Unit: mm
Internal Connection
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain to source voltage
V
DSS
I
D
= 10 A, V
GS
= 0
50
V
Drain cut-off current
I
DSS
V
DS
= 50 V, V
GS
= 0
1.0
A
Gate cut-off current
I
GSS
V
GS
= 7 V, V
DS
= 0
5
A
Gate threshold voltage
V
th
I
D
= 1 A, V
DS
= 3 V
0.9
1.2
1.5
V
Drain on-state resistance
R
DS(on)
I
D
= 10 mA, V
GS
= 2.5 V
8
15
I
D
= 10 mA, V
GS
= 4.0 V
6
12
Forward transfer admittance
Y
fs
I
D
= 10 mA, V
DS
= 4.0 V
20
60
mS
Input capacitance
C
iss
V
DS
= 3 V, V
GS
= 0 V, f = 1 MHz
12
pF
Output capacitance
C
oss
7
pF
Reverse transfer capacitance
C
rss
3
pF
Turn-on time
*
t
on
V
DD
= 3 V, V
GS
= 0 V to 3 V, R
L
= 470
200
ns
Turn-off time
*
t
off
V
DD
= 3 V, V
GS
= 3 V to 0 V, R
L
= 470
200
ns
Marking Symbol: AL
Parameter
Symbol
Rating
Unit
Rating
Drain to source voltage
V
DSS
50
V
of
Gate to source voltage
V
GSO
7
V
element
Drain current
I
D
100
mA
Max drain current
I
DP
200
mA
Overall
Allowable power dissipation
*
P
D
125
mW
Channel temperature
T
ch
125
C
Storage temperature
T
stg
-55 to +125
C
1: Gate (FET1)
4: Drain (FET2)
2: Source
5: Drain (FET1)
3: Gate (FET2)
SMini5-G1 Package
0.02
+0.05
0.20
(0.30)
(0.50)
1
2
3
5
4
(0.50)
0.55
0.05
0 to 0.02
0.10 max
1.00
0.05
1.60
0.05
0.10
0.02
Display at No.1 lead
(0.20)
5
5
1.60
0.05
1.20
0.05
(0.20)
3
4
FET1
FET2
1
2
5
Note) *: Refer to t
on
, t
off
test circuit (next page)
Note) *: Total power dissipation
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
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2002 JUL
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