Composite Transistors
1
Publication date: June 2003
SJJ00266BED
UP04534
Silicon NPN epitaxial planar type
For high-frequency amplification
Features
Two elements incorporated into one package (Each transistor is
separated)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
2SC2404 2
Absolute Maximum Ratings T
a
= 25C
Unit: mm
Internal Connection
Electrical Characteristics T
a
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
30
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
3
V
Base-emitter voltage
V
BE
V
CB
= 6 V, I
E
= -1 mA
720
mV
Forward current transfer ratio
h
FE
V
CB
= 6 V, I
E
= -1 mA
65
160
Reverse transfer capacitance
C
re
V
CB
= 6 V, I
E
= -1 mA, f = 10.7 MHz
0.8
1.0
pF
(Common emitter)
Transition frequency
f
T
V
CB
= 6 V, I
E
= -1 mA, f = 200 MHz
450
650
MHz
Noise figure
NF
V
CB
= 6 V, I
E
= -1 mA, f = 100 MHz
3.3
dB
Power gain
G
P
V
CB
= 6 V, I
E
= -1 mA, f = 100 MHz
24
dB
1: Emitter (Tr1)
4: Emitter (Tr2)
2: Base (Tr1)
5: Base (Tr2)
3: Collector (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
4
Tr1
Tr2
5
6
1
3
2
Marking Symbol: 7E
(0.30)
0.10
0.02
6
5
4
1
2
3
5
5
0.20
+0.05
0.02
1.60
0.05
0.55
0.05
0.10 max.
0 to 0.02
(0.20)
1.60
0.05
Display at No.1 lead
1.20
0.05
(0.20)
1.00
0.05
(0.50)(0.50)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
V
Collector-emitter voltage (Base open)
V
CEO
20
V
Emitter-base voltage (Collector open)
V
EBO
3
V
Collector current
I
C
15
mA
Total power dissipation
P
T
125
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
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products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
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2002 JUL
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