1
Composite Transistors
XN01872
(XN1872)
Silicon N-channel
Enhancement MOS FET
For switching
I
Features
G
Two elements incorporated into one package.
(Source-coupled FETs)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SK0621(2SK621)
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
1 : Drain (Tr1)
4 : Source
2 : Drain (Tr2)
5 : Gate (Tr1)
3 : Gate (Tr2)
EIAJ : SC74A
Mini5-G1 Pakage
Unit: mm
Marking Symbol:
5U
Internal Connection
Parameter
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
50
V
Gate to source voltage
V
GSO
8
V
Drain current
I
D
100
mA
I
DM
200
mA
Total power dissipation
P
T
300
mW
Channel temperature
T
ch
150
C
Storage temperature
T
stg
55 to +150
C
Rating
of
element
Overall
2.90
1.9
0.1
0.16
+0.10
0.06
2.8
+0.2 0.3
1.1
+0.3 0.1
1.1
0 to 0.1
+0.2 0.1
1.50
(0.65)
0.4
0.2
+0.25 0.05
(0.95) (0.95)
0.30
+0.10
0.05
5
4
3
1
2
+0.20
0.05
5
10
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to source voltage
V
DSS
I
D
= 100
A, V
GS
= 0
50
V
Drain current
I
DSS
V
DS
= 10V, V
GS
= 0
10
A
Gate cutoff current
I
GSS
V
GS
= 8V, V
DS
= 0
40
80
A
Gate threshold voltage
V
th
I
D
= 100
A, V
DS
= V
GS
1.5
3.5
V
Drain resistance
R
DS(on)
I
D
= 20mA, V
GS
= 5V
50
Forward transfer admittance
| Y
fs
|
I
D
= 20mA, V
DS
= 5V, f = 1kHz
20
30
mS
Output voltage high level
V
OH
V
DS
= 5V, V
GS
= 1V, R
L
= 200
4.5
V
Output voltage low level
V
OL
V
DS
= 5V, V
GS
= 5V, R
L
= 200
1.0
V
Input resistance
R
1
+R
2
*1
100
200
k
Turn-on time
t
on
*2
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200
1.0
s
Turn-off time
t
off
*2
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200
1.0
s
Common source short-circuit input capacitance
C
iss
V
DS
= 5V, V
GS
= 0, f = 1MHz
9
15
pF
5
FET 2
FET 1
4
3
2
1
*1
Pulse measurement
*2
Resistance ratio R
1
/R
2
= 1/50
Note) The Part number in the Parenthesis shows conventional part number.
2
Composite Transistors
XN01872
P
T
-- Ta
I
D
-- V
DS
I
D
-- V
GS
| Y
fs
| -- V
DS
C
iss
, C
oss
-- V
DS
R
DS(ON)
-- V
GS
V
IN
-- I
O
0
100
200
300
400
500
0
40
80
120
160
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
0
0
10
8
6
4
2
120
100
80
60
40
20
Drain current I
D
(mA
)
Drain to source voltage V
DS
(V)
Ta=25C
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
V
GS
=6.0V
0
0
10
8
6
4
2
120
100
80
60
40
20
Gate to source voltage V
GS
(V)
Drain current I
D
(mA
)
V
DS
=5V
Ta= 25C
25C
75C
0
10
8
6
4
2
Drain to source voltage V
DS
(V)
0
10
20
30
50
40
Forward transfer admittance |Y
fs
|
(mS
)
V
DS
=5V
Ta=25C
0.1
100
10
1
30
3
0.3
Drain to source voltage V
DS
(V)
0
12
10
8
6
4
2
Common source short-circuit input capacitance,
Common source short-circuit output capacitance
C
iss
, C
oss
(pF
)
V
GS
=0
f=1MHz
Ta=25C
C
iss
C
oss
0
0
10
8
6
4
2
120
100
80
60
40
20
Gate to source voltage V
GS
(V)
Drain resistance R
DS(on)
(
)
I
D
=20mA
Ta=75C
25C
25C
0.1
0.3
0.1
0.3
1
3
10
30
100
300
1000
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
=1V
Ta=25C
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2001 MAR
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